CAJ | 학술논문

阐述了电共沉积方法制备发射光波长近于1.3～1.5μm的InGaAs薄膜材料。用能谱分析仪进行薄膜成分分析，用分光光度计和单色仪测量薄膜的透射率，同时测量了薄膜I-V特性、导电类型、厚度及其表面形貌，分析结果表明该方法是半导体薄膜材料制备的一种新途径。
천술료전공침적방법제비발사광파장근우1.3～1.5μm적InGaAs박막재료。용능보분석의진행박막성분분석，용분광광도계화단색의측량박막적투사솔，동시측량료박막I-V특성、도전류형、후도급기표면형모，분석결과표명해방법시반도체박막재료제비적일충신도경。
This paper presents the principle and experimental method of electro-deposition.The radiative wave length of GaAs film,prepared by that method is between 1.3～1.5μm.The composition of the film was analyzed by the energy spectrometer, the transmission spectrum of the film was measured by the spectrophotometer and monochromator. And the V-I characteristic of the conductive type,the thickness of the film and the topography are also measured and analyzed.The results of measurement and analysis demonstrate that the elecro-deposition method is a novel approach of preparing semi-conductive film.