CAJ | 학술논문

研究了nc-Si：H薄膜的光致发光(PL)，分析了晶粒尺寸、温度对发光特性的影响。对发光样品，晶粒尺寸有一上限，其值在4～5nm之间。在10～77K，nc-Si：H薄膜的发光强度几乎没有变化；当温度高于77K，发光强度指数式下降。随温度升高，发光峰位有少许红移。讨论了nc-Si：H光致发光机理，用量子限制-发光中心模型对实验现象进行了解释。从载流子的激发、复合两方面讨论了发光过程，认为载流子在晶粒内部激发后，弛豫到晶粒界面的发光中心复合发光。
연구료nc-Si：H박막적광치발광(PL)，분석료정립척촌、온도대발광특성적영향。대발광양품，정립척촌유일상한，기치재4～5nm지간。재10～77K，nc-Si：H박막적발광강도궤호몰유변화；당온도고우77K，발광강도지수식하강。수온도승고，발광봉위유소허홍이。토론료nc-Si：H광치발광궤리，용양자한제-발광중심모형대실험현상진행료해석。종재류자적격발、복합량방면토론료발광과정，인위재류자재정립내부격발후，이예도정립계면적발광중심복합발광。
The photoluminescence （PL） properties of nc-Si：H films areinvestigated． The effects of grain size and temperature on PL properties are discussed． There is an upper limit for mean grain size of about 4～5 nm． If the grain size is larger than 5 nm， the visible PL can not be observed from nc-Si：H films． The PL intensity shows no change in the measurement temperature range of 10～77 K， while it decreases exponentially at temperature above 77 K． The PL peaks have a little red shift with temperature increase． The originate of PL from nc-Si：LH films can be explained by quantum confinement effect and luminescence centers （QCE-LCs） model． The electron-hole pairs are excited inside the nano-scale silicon， whose energy will be enlarged to visible range according to QCE． After a series of relaxation， the excited electron-hole pairs then recombine at LCs outside the nano-scale silicon．