CAJ | 학술논문

负偏压温度不稳定性效应(NBTI)已经成为影响CMOS集成电路可靠性的一个关键因素,而动态应力条件下的NBTI效应对器件和电路的影响越来越受到关注.对PMOSFET的动态NBTI效应进行了系统介绍,讨论了动态应力条件下NBTI(DNBTI)效应和静态应力下NBTI(SNBTI)退化机理,综述了DNBTI效应的动态恢复机制以及影响因素,最后介绍了NBTI效应对电路的影响.随着器件尺寸的日益缩小,如何提高电路的可靠性变得日益重要,进一步研究NBTI效应对电路的影响从而进行NBTI电路级可靠性设计已成为集成电路设计关注的焦点.
부편압온도불은정성효응(NBTI)이경성위영향CMOS집성전로가고성적일개관건인소,이동태응력조건하적NBTI효응대기건화전로적영향월래월수도관주.대PMOSFET적동태NBTI효응진행료계통개소,토론료동태응력조건하NBTI(DNBTI)효응화정태응력하NBTI(SNBTI)퇴화궤리,종술료DNBTI효응적동태회복궤제이급영향인소,최후개소료NBTI효응대전로적영향.수착기건척촌적일익축소,여하제고전로적가고성변득일익중요,진일보연구NBTI효응대전로적영향종이진행NBTI전로급가고성설계이성위집성전로설계관주적초점.
Negative bias temperature instability (NBTI) is a key factor of device reliability. NBTI under dynamic stress conditions affecting device and circuit attracts more and more attention. Dynamic NBTI for PMOSFET was introduced. The differences between dynamic NBTI and static NBTI were discussed. DNBTI was reviewed on dynamic recovery mechanisms and affecting factors. The impact of NBTI on circuits was given. With the scale of the device decreasing, how to improve the reliability of circuits is becoming more and more important. So further studying of NBTI effect on circuits and the circuit-level reliability design becomes the main consideration in IC design.