CAJ | 학술논문

报道了气态分子束外延(GSMBE)生长1.8—2.0μm波段InGaAs/InGaAsP应变量子阱激光器的研究结果．1.8μm波段采用平面电极条形结构，已制备成功10μm和80μm条宽器件，器件腔长500μm，室温下光致发光中心波长约为1.82μm，在77K温度下以脉冲方式激射，阈值电流分别约为250mA和600 mA，中心波长分别在1.69μm和1.73μm附近． 2.0μm波段，制备成功8μm宽脊波导结构器件，器件腔长500μm，室温光致发光中心波长约为1.98μm，77K温度下以脉冲方式激射，阈值电流约为 20mA，中心波长约为1.89μm，其电流限制和纵模限制效果优于平面电极条形结构器件．
보도료기태분자속외연(GSMBE)생장1.8—2.0μm파단InGaAs/InGaAsP응변양자정격광기적연구결과．1.8μm파단채용평면전겁조형결구，이제비성공10μm화80μm조관기건，기건강장500μm，실온하광치발광중심파장약위1.82μm，재77K온도하이맥충방식격사，역치전류분별약위250mA화600 mA，중심파장분별재1.69μm화1.73μm부근． 2.0μm파단，제비성공8μm관척파도결구기건，기건강장500μm，실온광치발광중심파장약위1.98μm，77K온도하이맥충방식격사，역치전류약위 20mA，중심파장약위1.89μm，기전류한제화종모한제효과우우평면전겁조형결구기건．
GSMBE(Gaseous Source Molecular Beam Epitaxy) grown 1.8—2.0μm waveband InGaAs/InGaAsP/InP strained quantum well lasers are reported.At 1.8μm's wavelength,the lasers with 10μm and 80μm wide planar electrical stripe structures are fabricated,which are observed with pulsed electrical luminescence at room temperature,and the estimated peak wavelengths is about 1.80μm .At 77K，the 10μm and 80μm-wide-stripe lasers become lasing in the pulsed regime,with the threshold currents being about 250mA and 600mA;the center wavelengths of 1.69μm and 1.73μm,respectively.The 80μm-wide-stripe lasers can be found with the multiple-longitudinal-mode operation,while the 10μm ones with the two or three-longitudinal-mode operation.At 2.0μm's wavelength,the lasers with 8μm-wide ridgewaveguide structures are fabricated.At room temperature the pulsed electrical luminescence spectrum is observed with the peak wavelength about 1.98μm.At 77K，the lasers become lasing in the pulsed regime,with the threshold current about 20 mA ,center wavelength 1.89μm and the single-longitudinal-mode operation in the current range of 160—230mA.