CAJ | 학술논문

建立一套基于超高真空俄歇电子能谱的原位加热系统,对GaN薄膜进行热效应研究.随着温度的增加,Ga LMM和GaMVV的动能减小.利用第一性原理计算,获得理论的GaMVV俄歇谱.加热过程由于晶格热膨胀以及表面原子再构引起价电子态密度发生变化,从而导致价带俄歇谱负移.
건립일투기우초고진공아헐전자능보적원위가열계통,대GaN박막진행열효응연구.수착온도적증가,Ga LMM화GaMVV적동능감소.이용제일성원리계산,획득이론적GaMVV아헐보.가열과정유우정격열팽창이급표면원자재구인기개전자태밀도발생변화,종이도치개대아헐보부이.
An in situ heating system was built for the Auger electron spectroscopy to investigate the thermal effect of Auger lines. A GaN sample was studied in this system. The kinetic energy of Ga LMM and MVV Auger lines were observed to shift negatively with temperature increasing. By using ab initio calculation, the theoretical Ga MVV Auger line shape was fit, which well reflects the inner property of the line. The Auger shift with heating is related with the valence electron rearrangement in the thermal expansion of the local bonds.