CAJ | 학술논문

介绍了一种制作栅介质的新工艺--原位水汽生成工艺.基于Deal-Grove模型提出了原位水汽生成过程中活性氧原子和硅一硅键反应形成硅氧硅键的氧化模型,并通过MOS电容结构对原位水汽生成和炉管湿法氧化所形成的栅氧化膜的电击穿特性进行了研究和分析.测试结果表明原位水汽生成的栅氧化膜相对于炉管湿法氧化有着更为突出的电学性能,这可以认为是由于弱硅一硅键的充分氧化所导致的.表明原位水汽生成在深亚微米集成电路器件制造中具有广阔应用前景.
개소료일충제작책개질적신공예--원위수기생성공예.기우Deal-Grove모형제출료원위수기생성과정중활성양원자화규일규건반응형성규양규건적양화모형,병통과MOS전용결구대원위수기생성화로관습법양화소형성적책양화막적전격천특성진행료연구화분석.측시결과표명원위수기생성적책양화막상대우로관습법양화유착경위돌출적전학성능,저가이인위시유우약규일규건적충분양화소도치적.표명원위수기생성재심아미미집성전로기건제조중구유엄활응용전경.
A new process for gate dielectric fabrication named in situ steam generation (ISSG) is reported. Based on the Deal-Grove model,an oxidation mechanism is proposed to break the Si-Si bond by an active atomic O and form a Si-O-Si bond during the oxidation process. The breakdown characteristics are investigated through a MOS-capacitor for both ISSG and furnace wet oxidation. The gate dielectric material generated by ISSG oxidation has a superior electrical per-formance owing to sufficient oxidation of weak Si-Si bonds relative to furnace wet oxidation,indicating a promising appli-cation in sub-micron IC device manufacturing.