CAJ | 학술논문

利用新近合成的聚酰亚胺LB膜定向铁电液晶分子，通过原子力显微镜对经不同亚胺化温度处理的聚酰亚胺LB膜进行扫描探测，发现相应的LB膜具有不同的形貌结构，认为高温亚胺化的LB膜可以提供较高的势垒，这为铁电液晶双稳记忆性的出现提供了可能，而LB膜的超薄特性有利于开关过程中表面聚积电荷的中和与释放,保证了器件优良的双稳记忆性的最终获得以及微秒量级快速响应的实现。
이용신근합성적취선아알LB막정향철전액정분자，통과원자력현미경대경불동아알화온도처리적취선아알LB막진행소묘탐측，발현상응적LB막구유불동적형모결구，인위고온아알화적LB막가이제공교고적세루，저위철전액정쌍은기억성적출현제공료가능，이LB막적초박특성유리우개관과정중표면취적전하적중화여석방,보증료기건우량적쌍은기억성적최종획득이급미초량급쾌속향응적실현。
Newly-synthesized polyimide(PI) LB films were deposited and used to align ferroelectric liquid crystals(FLCs).Atomic force microscope was used to investigate the morphology of PI LB films.It is found that LB films show different crystalline structure when they were treated by the different imidization temperatures.The LB films imidized at the high temperature show the orderly oriented polymer chain structure on the sustrate surfaces while the low temperature treated LB films show an irregular amphours-like aggregate structure.It demonstrates that these two types of PI LB films show different surface orderness and crystallinity.The surface-stabilized FLC cells that are aligned by the high temperature imidized PI LB films have the fast response times of 80 and 90μs to the rising and decaying stages respectively and an excellent bistability to the completeness,while the cells which are aligned by the low temperature imidized PI LB films show slower response times longer than 1ms and the incomplete memory capability.According to the AFM observations and the charge-transfer model in the interface between LB alignment films and the FLC layer,it is regarded that the LB films imidized at the high temperature can provide a higher energy barrier than that of imidized at the low temperature,which facilitates the appearance of FLC bistability.In addition,the ultra-thinness of LB films is beneficial for the neutralization and release of the surface charges brought out during the switching process,which guarantees the obtainment of excellent bistable memory capability and the realization of fast response up to micro-seconds in the surface-stabilized FLC devices.