微电子学
微電子學
미전자학
MICROELECTRONICS
2010年
2期
278-282
,共5页
黄春益%马卫东%张喆%谢雪松%吕长志%李志国
黃春益%馬衛東%張喆%謝雪鬆%呂長誌%李誌國
황춘익%마위동%장철%사설송%려장지%리지국
开关电源%DC/DC变换器%加速寿命试验%恒定电应力温度斜坡法
開關電源%DC/DC變換器%加速壽命試驗%恆定電應力溫度斜坡法
개관전원%DC/DC변환기%가속수명시험%항정전응력온도사파법
Switching power supply%Accelerated life test%DC/DC converter%CETRM
模拟开关电源DC/DC模块内部电路为开关电源中的功率器件-垂直导电双扩散MOS (VDMOS) 和肖特基二极管(SBD)-提供恒定电应力,并对其施加温度应力进行加速寿命试验.采用恒定电应力温度斜坡法(CETRM),对开关电源中功率器件VDMOS和SBD的可靠性进行评价;对其失效机理一致性进行分析,计算其失效激活能;并在失效机理一致的范围内外推正常使用条件下的寿命,为开关电源整体可靠性评价提供依据.
模擬開關電源DC/DC模塊內部電路為開關電源中的功率器件-垂直導電雙擴散MOS (VDMOS) 和肖特基二極管(SBD)-提供恆定電應力,併對其施加溫度應力進行加速壽命試驗.採用恆定電應力溫度斜坡法(CETRM),對開關電源中功率器件VDMOS和SBD的可靠性進行評價;對其失效機理一緻性進行分析,計算其失效激活能;併在失效機理一緻的範圍內外推正常使用條件下的壽命,為開關電源整體可靠性評價提供依據.
모의개관전원DC/DC모괴내부전로위개관전원중적공솔기건-수직도전쌍확산MOS (VDMOS) 화초특기이겁관(SBD)-제공항정전응력,병대기시가온도응력진행가속수명시험.채용항정전응력온도사파법(CETRM),대개관전원중공솔기건VDMOS화SBD적가고성진행평개;대기실효궤리일치성진행분석,계산기실효격활능;병재실효궤리일치적범위내외추정상사용조건하적수명,위개관전원정체가고성평개제공의거.
Internal circuit of DC/DC switching power supply module provides constant electronic stress for VDMOS and SBD. Accelerated life test was carried out by applying temperature stress. And reliability of power devices, VDMOS and SBD, was evaluated with constant electrical stress and temperature ramp stress method (CETRM). The consistency of its failure mechanism was analyzed, and activation energy was calculated. Lifetime of power devices under normal operation was estimated in the consistent range of failure mechanism, which could be used as references for reliability estimation of DC/DC switching power supply.