电子器件
電子器件
전자기건
JOURNAL OF ELECTRON DEVICES
2007年
5期
1547-1551
,共5页
宋明歆%殷景华%贺训军%朱敏%曹一江
宋明歆%慇景華%賀訓軍%硃敏%曹一江
송명흠%은경화%하훈군%주민%조일강
RF MEMS开关%驱动电压%扭转%仿真
RF MEMS開關%驅動電壓%扭轉%倣真
RF MEMS개관%구동전압%뉴전%방진
RF MEMS switch%Low actuation voltage%Torsion spring%Simulation
介绍了一种基于扭转的新型低压电容式RF MEMS开关的设计.此开关在保留传统挠曲变形的基础上,引入了扭转变形,并利用IntelliSuite等软件进行仿真分析.理论分析和仿真结果表明:与传统弯曲变形不同,在扭转变形中,变形对臂的厚度远比宽度敏感;在保留传统挠曲变形的基础上,增加了扭转变形,将有效降低驱动电压.理论分析还表明增长扭转臂、从动臂可使驱动电压明显下降.通过优化结构设计,在扭转臂、从动臂长为180 μm、120 μm,臂宽为5 μm,厚为1 μm,驱动电极面积为120 μm×120 μm时,仿真得到驱动电压为1.5 V.
介紹瞭一種基于扭轉的新型低壓電容式RF MEMS開關的設計.此開關在保留傳統撓麯變形的基礎上,引入瞭扭轉變形,併利用IntelliSuite等軟件進行倣真分析.理論分析和倣真結果錶明:與傳統彎麯變形不同,在扭轉變形中,變形對臂的厚度遠比寬度敏感;在保留傳統撓麯變形的基礎上,增加瞭扭轉變形,將有效降低驅動電壓.理論分析還錶明增長扭轉臂、從動臂可使驅動電壓明顯下降.通過優化結構設計,在扭轉臂、從動臂長為180 μm、120 μm,臂寬為5 μm,厚為1 μm,驅動電極麵積為120 μm×120 μm時,倣真得到驅動電壓為1.5 V.
개소료일충기우뉴전적신형저압전용식RF MEMS개관적설계.차개관재보류전통뇨곡변형적기출상,인입료뉴전변형,병이용IntelliSuite등연건진행방진분석.이론분석화방진결과표명:여전통만곡변형불동,재뉴전변형중,변형대비적후도원비관도민감;재보류전통뇨곡변형적기출상,증가료뉴전변형,장유효강저구동전압.이론분석환표명증장뉴전비、종동비가사구동전압명현하강.통과우화결구설계,재뉴전비、종동비장위180 μm、120 μm,비관위5 μm,후위1 μm,구동전겁면적위120 μm×120 μm시,방진득도구동전압위1.5 V.
A novel design of capacitive RF MEMS switches using torsion spring is presented. The RF MEMS switches not only have ordinary folded-suspending beams, but also torsion springs,and the novel model is simulated with IntelliSuite software and so on. The Results from theoretical analysis and simulation show that compared with ordinary bending deflection, the torsion deflection is more sensibly influenced by the arm width than the arm thickness; the actuation voltage of the novel switches will be obviously depressed. At same time, theoretical analysis shows that the lower VT can be obtained with longer torsion arm length (LT), longer driven arm length (LD). By optimizing the structure design of RF MEMS switches, when LT, LD, b and t are 180 μm, 120 μm, 5 μm and 1 μm, respectively, the area actuation electrodes is 120 μm×120 μm, the actuation voltage is 1.5 V by computer simulating.