广州化工
廣州化工
엄주화공
GUANGZHOU CHEMICAL INDUSTRY AND TECHNOLOGY
2012年
3期
59-62
,共4页
Sb掺杂SnO2%表面富集
Sb摻雜SnO2%錶麵富集
Sb참잡SnO2%표면부집
Sb-doped SnO2%surface segregation
采用化学共沉淀法,以SnCl4.5H2O和SbCl3为原料,成功地制备了5～20 nm左右、四方金红石Sb掺杂SnO2（ATO）微晶粉体。电阻率,XRD、XPS综合测试分析表明：Sb掺杂量、煅烧温度对Sb在SnO2晶粒中的分布、Sb价态的存在形式、电阻率的变化有较大的影响。掺杂到SnO2粉体中的Sb含量,不会改变SnO2的四方金红石结构,一部分Sb原子固溶到SnO2晶格中,剩余的Sb原子向SnO2粉体表面富集,并取代SnO2表面的Sn原子,形成Sb富集层,相当于一层＂栅栏＂,阻碍心部Sb原子向表面扩散,抑止掺杂SnO2（ATO）晶粒的长大。
採用化學共沉澱法,以SnCl4.5H2O和SbCl3為原料,成功地製備瞭5～20 nm左右、四方金紅石Sb摻雜SnO2（ATO）微晶粉體。電阻率,XRD、XPS綜閤測試分析錶明：Sb摻雜量、煅燒溫度對Sb在SnO2晶粒中的分佈、Sb價態的存在形式、電阻率的變化有較大的影響。摻雜到SnO2粉體中的Sb含量,不會改變SnO2的四方金紅石結構,一部分Sb原子固溶到SnO2晶格中,剩餘的Sb原子嚮SnO2粉體錶麵富集,併取代SnO2錶麵的Sn原子,形成Sb富集層,相噹于一層＂柵欄＂,阻礙心部Sb原子嚮錶麵擴散,抑止摻雜SnO2（ATO）晶粒的長大。
채용화학공침정법,이SnCl4.5H2O화SbCl3위원료,성공지제비료5～20 nm좌우、사방금홍석Sb참잡SnO2（ATO）미정분체。전조솔,XRD、XPS종합측시분석표명：Sb참잡량、단소온도대Sb재SnO2정립중적분포、Sb개태적존재형식、전조솔적변화유교대적영향。참잡도SnO2분체중적Sb함량,불회개변SnO2적사방금홍석결구,일부분Sb원자고용도SnO2정격중,잉여적Sb원자향SnO2분체표면부집,병취대SnO2표면적Sn원자,형성Sb부집층,상당우일층＂책란＂,조애심부Sb원자향표면확산,억지참잡SnO2（ATO）정립적장대。
The quartet rutile Sb-doped SnO2（ATO） microcrystalline powder with a particle diameter of about 5~20 nm was successfully prepared by chemical co-precipitation method with raw material SnCl4·5H2O and SbCl3.The resistivity,XRD and XPS comprehensive test analysis showed the large influence of Sb doped concentration,and the calcination temperature on the Sb distribution,valence existence forms,and the electrical resistivity in SnO2 grain was observed.Sb content doped into SnO2 powder would not change quartet rutile structure of SnO2.Sb was partly incorporated into the SnO2 lattice.The remaining atoms created a layer on the surface of SnO2,which provided a barrier for surface diffusion and suppress crystal growth during calcinations.
