仲恺农业工程学院学报
仲愷農業工程學院學報
중개농업공정학원학보
JOURNAL OF ZHONGKAI UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
2011年
4期
37-40
,共4页
向洪平%葛建芳%郑扬帆%周学廉
嚮洪平%葛建芳%鄭颺帆%週學廉
향홍평%갈건방%정양범%주학렴
TiO2%改性MQ硅树脂%热稳定性
TiO2%改性MQ硅樹脂%熱穩定性
TiO2%개성MQ규수지%열은정성
TiO2%modified MQ silicone rein%thermal stability
以钛酸酯为前躯体,采用溶胶-凝胶法合成了TiO2改性的MQ硅树脂.就前躯体、MQ硅树脂及物料比对改性树脂热稳定性的影响进行了研究.同时,采用傅立叶红外光谱(Fourier Transform Infrared Spectrometer,FT-IR)对材料的分子结构进行了表征,采用热重分析(Thermogravimetric Aanlysis, TGA)对材料的热稳定性能进行了测试,采用扫描电镜(Scanning Electron Microscope, SEM)对材料的表面形貌进行了扫描.结果表明,TiO2改性MQ硅树脂体系中存在Ti-O-Si共价键;当m(钛酸异丙酯):m(MQ硅树脂)=3:5时,改性树脂的热稳定性最佳;改性树脂粒子颗粒大小约为100nm左右.
以鈦痠酯為前軀體,採用溶膠-凝膠法閤成瞭TiO2改性的MQ硅樹脂.就前軀體、MQ硅樹脂及物料比對改性樹脂熱穩定性的影響進行瞭研究.同時,採用傅立葉紅外光譜(Fourier Transform Infrared Spectrometer,FT-IR)對材料的分子結構進行瞭錶徵,採用熱重分析(Thermogravimetric Aanlysis, TGA)對材料的熱穩定性能進行瞭測試,採用掃描電鏡(Scanning Electron Microscope, SEM)對材料的錶麵形貌進行瞭掃描.結果錶明,TiO2改性MQ硅樹脂體繫中存在Ti-O-Si共價鍵;噹m(鈦痠異丙酯):m(MQ硅樹脂)=3:5時,改性樹脂的熱穩定性最佳;改性樹脂粒子顆粒大小約為100nm左右.
이태산지위전구체,채용용효-응효법합성료TiO2개성적MQ규수지.취전구체、MQ규수지급물료비대개성수지열은정성적영향진행료연구.동시,채용부립협홍외광보(Fourier Transform Infrared Spectrometer,FT-IR)대재료적분자결구진행료표정,채용열중분석(Thermogravimetric Aanlysis, TGA)대재료적열은정성능진행료측시,채용소묘전경(Scanning Electron Microscope, SEM)대재료적표면형모진행료소묘.결과표명,TiO2개성MQ규수지체계중존재Ti-O-Si공개건;당m(태산이병지):m(MQ규수지)=3:5시,개성수지적열은정성최가;개성수지입자과립대소약위100nm좌우.
TiO2 modified MQ silicone resin had been synthesized by means of sol-gel process with titanate as the precursor of titania. The effects of precursor, MQ silicone resin and material ratio on the thermal stability of modified resin were investigated. The molecular structure, thermal stability and surface topography of the modified resin were characterized and analyzed by FT-IR, TGA, SEM, respectively. The results showed that Ti-O-Si covalent bond had been formed in the TiO2 modified MQ silicone resin. The modified resin had the optimal thermal stability with the tetraisopropyl titanate as the precursor, When the weight ratio of tetraisopropyl titanate to MQ silicone resin was 3: 5. The modified resin possessed a homogeneously distributed particle size which was around 100nm.