硅酸盐通报
硅痠鹽通報
규산염통보
BULLETIN OF THE CHINESE CERAMIC SOCIETY
2009年
5期
1060-1063,1075
,共5页
缓冲层%薄膜%结晶%(SZO)_10(STO)_90
緩遲層%薄膜%結晶%(SZO)_10(STO)_90
완충층%박막%결정%(SZO)_10(STO)_90
buffer layer%thin film%crystallization%(SZO)_10(STO)_90
_采用Sol-gel法制备了PbZr_0.52Ti_0.48O_3 (PZT)薄膜,并研究了(SrZrO_3)_(10)(SrTiO_3)_(90)((SZO)_10(STO)_90)缓冲层对PZT薄膜结晶和性能的影响.X射线衍射(XRD)结果表明:(SZO)_10(STO)_90缓冲层对PZT薄膜结晶有取向诱导作用,由(SZO)_10(STO)_90诱导的PZT薄膜有很强的(111)择优取向,缓冲层将PZT薄膜的取向度α由45.0%提高到了90.1%以上;PZT的(111)择优取向提高了薄膜的电性能,使剩余极化强度Pr从26.8 μC/cm~2增大到38.8 μC/cm~2.
_採用Sol-gel法製備瞭PbZr_0.52Ti_0.48O_3 (PZT)薄膜,併研究瞭(SrZrO_3)_(10)(SrTiO_3)_(90)((SZO)_10(STO)_90)緩遲層對PZT薄膜結晶和性能的影響.X射線衍射(XRD)結果錶明:(SZO)_10(STO)_90緩遲層對PZT薄膜結晶有取嚮誘導作用,由(SZO)_10(STO)_90誘導的PZT薄膜有很彊的(111)擇優取嚮,緩遲層將PZT薄膜的取嚮度α由45.0%提高到瞭90.1%以上;PZT的(111)擇優取嚮提高瞭薄膜的電性能,使剩餘極化彊度Pr從26.8 μC/cm~2增大到38.8 μC/cm~2.
_채용Sol-gel법제비료PbZr_0.52Ti_0.48O_3 (PZT)박막,병연구료(SrZrO_3)_(10)(SrTiO_3)_(90)((SZO)_10(STO)_90)완충층대PZT박막결정화성능적영향.X사선연사(XRD)결과표명:(SZO)_10(STO)_90완충층대PZT박막결정유취향유도작용,유(SZO)_10(STO)_90유도적PZT박막유흔강적(111)택우취향,완충층장PZT박막적취향도α유45.0%제고도료90.1%이상;PZT적(111)택우취향제고료박막적전성능,사잉여겁화강도Pr종26.8 μC/cm~2증대도38.8 μC/cm~2.
PbZr_0.52Ti_0.48O_3 (PZT) thin films were prepared by a Sol-gel method with (SZO)_(10)(STO)_(90) buffer layer. The effect of (SZO)_(10)(STO)_(90) buffer layer on the crystallization and ferroelectric properties of PZT thin films was investigated. X-ray diffraction patterns show that the crystallization of PZT thin films varies with buffer layer clearly. (SZO)_(10)(STO)_(90) seeding layer almost results in the formation of a single (111)-textured PZT film, and (111)-orientation degree increases from 45.0% to more then 90.1%. At the same time, ferroelectric properties of the PZT thin film are improved by (SZO)_(10)(STO)_(90) seeding layer, remanent polarization increases from 26.8 μC/cm~2 to 38.8 μC/cm~2.
