硅酸盐学报
硅痠鹽學報
규산염학보
JOURNAL OF THE CHINESE CERAMIC SOCIETY
2006年
4期
408-412
,共5页
赵婧%李怀祥%王安河%左相青%周宏伟
趙婧%李懷祥%王安河%左相青%週宏偉
조청%리부상%왕안하%좌상청%주굉위
硅酸钙荧光粉%表面包覆%导电包覆层%光致荧光
硅痠鈣熒光粉%錶麵包覆%導電包覆層%光緻熒光
규산개형광분%표면포복%도전포복층%광치형광
calcium silicate phosphor%surface modification%conductive coating%photoluminescence
利用溶液中的共沉淀反应制备了CaSiO3:(Pb,Mn)红色光致荧光粉.以Zn(NO3)2·6H2O和AlCl3·6H2O为原料,借助CO(NH2)2水解反应,用化学均相共沉淀法和热处理工艺在荧光粉表面包覆一层ZnO:Al透明导电薄膜.对包覆前后的样品进行了X射线衍射结构分析、光致荧光分析、透射电镜形貌观察及电阻测量.结果显示:包覆后荧光粉的电导率显著提高,但光致荧光峰的位置和强度无明显变化.综合考虑包覆对荧光粉电阻率和荧光性质的影响,优化包覆条件和热处理条件为:n(Zn)/n(Ca)=10%,n(Al)/n(Zn)=5%,75℃水解1 5 h;包覆后的样品在500℃热处理45 min.
利用溶液中的共沉澱反應製備瞭CaSiO3:(Pb,Mn)紅色光緻熒光粉.以Zn(NO3)2·6H2O和AlCl3·6H2O為原料,藉助CO(NH2)2水解反應,用化學均相共沉澱法和熱處理工藝在熒光粉錶麵包覆一層ZnO:Al透明導電薄膜.對包覆前後的樣品進行瞭X射線衍射結構分析、光緻熒光分析、透射電鏡形貌觀察及電阻測量.結果顯示:包覆後熒光粉的電導率顯著提高,但光緻熒光峰的位置和彊度無明顯變化.綜閤攷慮包覆對熒光粉電阻率和熒光性質的影響,優化包覆條件和熱處理條件為:n(Zn)/n(Ca)=10%,n(Al)/n(Zn)=5%,75℃水解1 5 h;包覆後的樣品在500℃熱處理45 min.
이용용액중적공침정반응제비료CaSiO3:(Pb,Mn)홍색광치형광분.이Zn(NO3)2·6H2O화AlCl3·6H2O위원료,차조CO(NH2)2수해반응,용화학균상공침정법화열처리공예재형광분표면포복일층ZnO:Al투명도전박막.대포복전후적양품진행료X사선연사결구분석、광치형광분석、투사전경형모관찰급전조측량.결과현시:포복후형광분적전도솔현저제고,단광치형광봉적위치화강도무명현변화.종합고필포복대형광분전조솔화형광성질적영향,우화포복조건화열처리조건위:n(Zn)/n(Ca)=10%,n(Al)/n(Zn)=5%,75℃수해1 5 h;포복후적양품재500℃열처리45 min.
CaSiO3 : (Pb,Mn) phosphor particles with red luminescence were prepared by aqueous co-deposition reaction. Surface modification of CaSiO3: (Pb,Mn) phosphors was carried out by coating transparent conductive films of Al-doped zinc oxide which were formed by homogeneous phase co-precipitation and a heat treatment process. The coated phosphors were characterized by X-ray diffraction (XRD), photoluminescence (PL), transmission electron microscope(TEM), and conductance measurements. The results show that the conductivity of ZnO: Al-coated phosphors at n(Zn)/n(Ca) = 10%, n(Al)/n(Zn) = 5% is improved obviously when the corresponding photoluminescence intensity is the same as the prepared phosphors. To lower the resistivity of phosphors, the experimental conditions are optimized, which include a hydrolyzing temperature of 75℃, hydrolyzing duration of 1.5 h, heat treatment temperature of 500 ℃ and heat treatment time of 45 min.