等离子体科学和技术(英文版)
等離子體科學和技術(英文版)
등리자체과학화기술(영문판)
PLASMA SCIENCE & TECHNOLOGY
2003年
3期
1841-1847
,共7页
low temperature plasma%ion bombardment%plasma sheath%RF bias%ion beam source
Ions bombardment is very important in thin films and surface processing. The ionenergy and ion flux are two important parameters in ion bombardment. The ion current densitymainly dependent on the plasma density gives the number of energetic ions bombarding thesubstrate. The self-bias voltage in plasma sheath accelerates plasma ions towards the substrate.RF discharge can increase plasma density and RF bias can also provide the insulator substrate witha plasma sheath. In order to choose and control ion energy, ion density, the angle of incidence,and ion species, ion beam sources are used. New types of electrodeless ion sources (RF, MW,ECR-MW) have been introduced in detail. In the last, the effects of ion bombardment on thinfilms and surface processing are presented.
