微电子学
微電子學
미전자학
MICROELECTRONICS
2001年
1期
13-15
,共3页
师奕兵%陈光禹%王厚军%Jiann S.Yuan
師奕兵%陳光禹%王厚軍%Jiann S.Yuan
사혁병%진광우%왕후군%Jiann S.Yuan
混合信号集成电路%衬底噪声%器件模拟
混閤信號集成電路%襯底譟聲%器件模擬
혼합신호집성전로%츤저조성%기건모의
应用器件模拟软件SILVACO模拟三种结构重掺杂型衬底中注入高频电流的分布,根据模拟结果分析得出重掺杂型衬底的简化模型为一单节点,进而将简化模型与实际的混合信号集成电路结合,建立起重掺杂型衬底的噪声模型,并给出了参数估算式。
應用器件模擬軟件SILVACO模擬三種結構重摻雜型襯底中註入高頻電流的分佈,根據模擬結果分析得齣重摻雜型襯底的簡化模型為一單節點,進而將簡化模型與實際的混閤信號集成電路結閤,建立起重摻雜型襯底的譟聲模型,併給齣瞭參數估算式。
응용기건모의연건SILVACO모의삼충결구중참잡형츤저중주입고빈전류적분포,근거모의결과분석득출중참잡형츤저적간화모형위일단절점,진이장간화모형여실제적혼합신호집성전로결합,건립기중참잡형츤저적조성모형,병급출료삼수고산식。
The vector paths of the current injected into the heav ily dopedsubstrate with three different structures are simulated using device simulator SILVACO. The simulation results indicate that the whole substr ate can be modeled as a single node. With this simplified model incorporated in the actual mixed-signal IC's and depending on the circuit layout, the total substrate crosstalk model of the heavily doped substrate is extracted. The parameter extraction is also derived.