功能材料与器件学报
功能材料與器件學報
공능재료여기건학보
JOURNAL OF FUNCTIONAL MATERIALS AND DEVICES
2001年
1期
81-84
,共4页
简贵胄%郑燕兰%林春%李爱珍%张永刚
簡貴冑%鄭燕蘭%林春%李愛珍%張永剛
간귀주%정연란%림춘%리애진%장영강
GaSb/AlGaAsSb化合物半导体%化学刻蚀%光电器件
GaSb/AlGaAsSb化閤物半導體%化學刻蝕%光電器件
GaSb/AlGaAsSb화합물반도체%화학각식%광전기건
提出了一种适用于GaSb/AlGaAsSb器件工艺的由氢氟酸、酒石酸和双氧水构成的氢氟酸系腐蚀液。该腐蚀液对于GaSb和AlGaAsSb材料具有良好的腐蚀特性和稳定的刻蚀速率。选用合适的溶液组份可以得到较低的刻蚀速率,有利于在器件工艺中进行精确控制。实验中发现该腐蚀液对AlGaAsSb的腐蚀速率与其Al组份呈抛物线关系,在合适的Al组份下可对AlGaAsSb和GaSb两种材料进行非选择性的刻蚀。
提齣瞭一種適用于GaSb/AlGaAsSb器件工藝的由氫氟痠、酒石痠和雙氧水構成的氫氟痠繫腐蝕液。該腐蝕液對于GaSb和AlGaAsSb材料具有良好的腐蝕特性和穩定的刻蝕速率。選用閤適的溶液組份可以得到較低的刻蝕速率,有利于在器件工藝中進行精確控製。實驗中髮現該腐蝕液對AlGaAsSb的腐蝕速率與其Al組份呈拋物線關繫,在閤適的Al組份下可對AlGaAsSb和GaSb兩種材料進行非選擇性的刻蝕。
제출료일충괄용우GaSb/AlGaAsSb기건공예적유경불산、주석산화쌍양수구성적경불산계부식액。해부식액대우GaSb화AlGaAsSb재료구유량호적부식특성화은정적각식속솔。선용합괄적용액조빈가이득도교저적각식속솔,유리우재기건공예중진행정학공제。실험중발현해부식액대AlGaAsSb적부식속솔여기Al조빈정포물선관계,재합괄적Al조빈하가대AlGaAsSb화GaSb량충재료진행비선택성적각식。
A new etchant consists of hydrofluoric acid, peroxide and tartaric acid for the chemical etching of GaSb/AlGaAsSb materials has been studied. Results show that this etchant has a stable etching rate to both GaSb and AlGaAsSb compound materials; under suitable solution composition quite low etching rate could be obtained, which are useful for the fabrication of GaSb/AlGaAsSb devices. Parabolic relation between the etching rate of AlGaAsSb materials and their Al content was found, unselective etching could be performed for GaSb and AlGaAsSb material with certain Al content.