CAJ | 학술논문

基于三维电磁场仿真软件HFSS和类似于准光学天线的集总源法,对一660GHz超导混频器的嵌入阻抗在整个600-720GHz的工作频带范围内进行了详细的分析研究.同时,还系统地分析计算了SIS结芯片的馈点偏移(包括水平偏移和垂直偏移)及芯片厚度和背向短路器长度变化所产生的影响.分析结果表明,该混频器的嵌入阻抗为35Ω左右,而且在整个工作频带内变化缓慢,能够实现宽频带匹配.SIS结芯片馈点的位置对嵌入阻抗没有太大的影响,但芯片厚度的影响非常明显.这些结果对超导SIS混频器的研制有很好的指导意义.
기우삼유전자장방진연건HFSS화유사우준광학천선적집총원법,대일660GHz초도혼빈기적감입조항재정개600-720GHz적공작빈대범위내진행료상세적분석연구.동시,환계통지분석계산료SIS결심편적궤점편이(포괄수평편이화수직편이)급심편후도화배향단로기장도변화소산생적영향.분석결과표명,해혼빈기적감입조항위35Ω좌우,이차재정개공작빈대내변화완만,능구실현관빈대필배.SIS결심편궤점적위치대감입조항몰유태대적영향,단심편후도적영향비상명현.저사결과대초도SIS혼빈기적연제유흔호적지도의의.
With the help of an electromagnetic field simulator(i.e., HFSS) and a lumped-gap source method similar to the quasi-optical antennas, the embedding impedance of a 660-GHz waveguide SIS (Superconductor-Insulator-Superconductor) mixer was thoroughly investigated from 600 to 720GHz.The effects of the junction's feed-point displacement(including horizontal and vertical offsets), chip thickness and backshort length were analyzed and calculated.The results indicate that the simulated embedding impedance of the mixer is around 35Ω over the working frequency range, which can match the SIS junction in a large bandwidth. The feed point location of the SIS chip has little effect on the embedding impedance, while the chip thickness obviously does. These results will benefit the development of waveguide SIS mixers.