强激光与粒子束
彊激光與粒子束
강격광여입자속
HIGH POWER LASER AND PARTICLEBEAMS
2010年
1期
15-18
,共4页
林洪沂%苗杰光%檀慧明%苏少昌%崔铁成%郭劲
林洪沂%苗傑光%檀慧明%囌少昌%崔鐵成%郭勁
림홍기%묘걸광%단혜명%소소창%최철성%곽경
非线性光学%光学参量振荡器%被动调Q%PPMgLN%可调谐
非線性光學%光學參量振盪器%被動調Q%PPMgLN%可調諧
비선성광학%광학삼량진탕기%피동조Q%PPMgLN%가조해
nonlinear optics%optical parametric oscillator%passively Q-switched%PPMgLN%tunable
报道了一个低阈值宽调谐、被动调Q、单谐振掺MgO的周期性极化铌酸锂晶体(PPMgLN)光学参量振荡器.利用被动调Q的Nd:YVO_4激光器作为泵浦源,采用外腔结构,在室温下,实现了PPMgLN晶体的准相位匹配光学参量振荡.光参量振荡的阈值仅为0.27 W(单脉冲能量4.5 μJ、脉宽35 ns);在泵浦光为1.35 W(脉冲能量8.2 μJ、脉宽35 ns),PPMgLN周期为31 μm时,获得了161.9 mW,3.202 μm脉冲激光输出;同时获得了98.5 mW的1.594 μm信号光输出,总的光-光转化效率达到19.3%.通过改变晶体的周期,实现了闲频光3.13~4.19 μm,信号光1.43~1.65 μm的宽带可调谐激光输出.
報道瞭一箇低閾值寬調諧、被動調Q、單諧振摻MgO的週期性極化鈮痠鋰晶體(PPMgLN)光學參量振盪器.利用被動調Q的Nd:YVO_4激光器作為泵浦源,採用外腔結構,在室溫下,實現瞭PPMgLN晶體的準相位匹配光學參量振盪.光參量振盪的閾值僅為0.27 W(單脈遲能量4.5 μJ、脈寬35 ns);在泵浦光為1.35 W(脈遲能量8.2 μJ、脈寬35 ns),PPMgLN週期為31 μm時,穫得瞭161.9 mW,3.202 μm脈遲激光輸齣;同時穫得瞭98.5 mW的1.594 μm信號光輸齣,總的光-光轉化效率達到19.3%.通過改變晶體的週期,實現瞭閒頻光3.13~4.19 μm,信號光1.43~1.65 μm的寬帶可調諧激光輸齣.
보도료일개저역치관조해、피동조Q、단해진참MgO적주기성겁화니산리정체(PPMgLN)광학삼량진탕기.이용피동조Q적Nd:YVO_4격광기작위빙포원,채용외강결구,재실온하,실현료PPMgLN정체적준상위필배광학삼량진탕.광삼량진탕적역치부위0.27 W(단맥충능량4.5 μJ、맥관35 ns);재빙포광위1.35 W(맥충능량8.2 μJ、맥관35 ns),PPMgLN주기위31 μm시,획득료161.9 mW,3.202 μm맥충격광수출;동시획득료98.5 mW적1.594 μm신호광수출,총적광-광전화효솔체도19.3%.통과개변정체적주기,실현료한빈광3.13~4.19 μm,신호광1.43~1.65 μm적관대가조해격광수출.
A wide-tunable, low-threshold, extra-cavity singly resonant optical parametric oscillator(OPO) has been reported, which is based on periodically poled MgO:LiNbO_3 (PPMgLN). The OPO system, compact and simple, adopts a passively Q-switched Nd:YVO_4 laser as the pump source and realizes quasi-phase-matched optical parametric oscillation at room temperature. The threshold value of the OPO system is only 0.27 W (single pulse energy of 4.5 μJ, pulse duration of 35 ns) at 1 064 nm. When the pump power is 1.35 W (pulse energy of 8.2 μJ, pulse duration of 35 ns), an idler output power of 161.9 mW at 3.202 μm, and a signal output power of 98.5 mW at 1.594 μm have been achieved, and this corresponds to a whole (idler+signal) optic-optic conversion efficiency of 19.3%. By shifting the PPMgLN crystal, the periods of the domain structure on the PPMgLN wafer can be changed, thus enabling a wide idler spectral tuning range from 3.13 to 4.19 μm, and a wide signal spectral tuning range from 1.65 to 1.43 μm.