CAJ | 학술논문

分别在ITO与NPB间加入高迁移率的m-MTDATA:x%4F-TCNQ来增强器件的空穴注入,在阴极和发光层之间加入高迁移率的Bphen:Liq层增强器件的电子注入,制备了结构为ITO/m-MTDATA:x%4F-TCNQ/NPB/Alq_3/Bphen:Liq/LiF/Al的有机发光器件.研究了传输层的单载流子器件行为,同时,由于注入的电子和空穴数量偏离平衡,器件的整体效率也会受到影响,在实验中通过调节4F-TCNQ的质量百分比,来调控空穴的注入和传输,使载流子达到了较好的平衡.器件的最大电流效率和流明效率分别达到了6.1 cd/A和5.2 lm/W.
분별재ITO여NPB간가입고천이솔적m-MTDATA:x%4F-TCNQ래증강기건적공혈주입,재음겁화발광층지간가입고천이솔적Bphen:Liq층증강기건적전자주입,제비료결구위ITO/m-MTDATA:x%4F-TCNQ/NPB/Alq_3/Bphen:Liq/LiF/Al적유궤발광기건.연구료전수층적단재류자기건행위,동시,유우주입적전자화공혈수량편리평형,기건적정체효솔야회수도영향,재실험중통과조절4F-TCNQ적질량백분비,래조공공혈적주입화전수,사재류자체도료교호적평형.기건적최대전류효솔화류명효솔분별체도료6.1 cd/A화5.2 lm/W.
OLEDs with the structure of ITO/m-MTDATA : x% 4F-TCNQ/NPB/TBADN : EBDP : DCJTB/ Bphen: Liq/LiF/Al was demonstrated. A p-doping layer that includes 4F-TCNQ doped into m-MTDATA was used as hole transport layer (HTL) and an n-doping layer comprised of Liq doped into Bphen was used as electron transport layer (ETL) to lower barrier and facilitate carrier injection. The characteristics of hole-only and electron-only devices were studied. An effective carrier balance between holes and electrons was considered to be one of the most important factors for improving OLEDs. The holes injection and transport of the devices were controlled by adjusting doping concentration of 4F-TCNQ for good balance of carriers. The maximum current efficiency and power efficiency of devices are 6.1 cd/A and 5.2 lm/W, respectively.