无机材料学报
無機材料學報
무궤재료학보
JOURNAL OF INORGANIC MATERIALS
2009年
6期
1155-1158
,共4页
郭晓明%闫永杰%陈健%黄政仁%刘学建
郭曉明%閆永傑%陳健%黃政仁%劉學建
곽효명%염영걸%진건%황정인%류학건
挤出成型%碳化硅%显微结构
擠齣成型%碳化硅%顯微結構
제출성형%탄화규%현미결구
extrusion%silicon carbide%microstructure
以羟丙基甲基纤维素(HPMC)作为有机塑化剂, 采用挤出成型工艺常压烧结制备碳化硅陶瓷管材, 系统研究了羟丙基甲基纤维素含量对陶瓷管材性能的影响以及不同温度制度下碳化硅陶瓷显微结构变化. 研究结果表明, 陶瓷管材坯体的平均径向抗外压强度随着HPMC含量的增加呈增加趋势, 当HPMC含量为7.5wt%时达462MPa;2200℃保温1h烧结陶瓷管材的致密度随着HPMC含量的改变没有明显的变化. 采用两步烧结法得到的碳化硅管材体积密度从3.00g/cm~3增加到3.07g/cm~3, 平均径向抗外压强度达540MPa, 致密度可达95.9%. 抛光面经化学腐蚀后的显微结构表明碳化硅颗粒出现异常长大, 有部分板状晶粒出现.
以羥丙基甲基纖維素(HPMC)作為有機塑化劑, 採用擠齣成型工藝常壓燒結製備碳化硅陶瓷管材, 繫統研究瞭羥丙基甲基纖維素含量對陶瓷管材性能的影響以及不同溫度製度下碳化硅陶瓷顯微結構變化. 研究結果錶明, 陶瓷管材坯體的平均徑嚮抗外壓彊度隨著HPMC含量的增加呈增加趨勢, 噹HPMC含量為7.5wt%時達462MPa;2200℃保溫1h燒結陶瓷管材的緻密度隨著HPMC含量的改變沒有明顯的變化. 採用兩步燒結法得到的碳化硅管材體積密度從3.00g/cm~3增加到3.07g/cm~3, 平均徑嚮抗外壓彊度達540MPa, 緻密度可達95.9%. 拋光麵經化學腐蝕後的顯微結構錶明碳化硅顆粒齣現異常長大, 有部分闆狀晶粒齣現.
이간병기갑기섬유소(HPMC)작위유궤소화제, 채용제출성형공예상압소결제비탄화규도자관재, 계통연구료간병기갑기섬유소함량대도자관재성능적영향이급불동온도제도하탄화규도자현미결구변화. 연구결과표명, 도자관재배체적평균경향항외압강도수착HPMC함량적증가정증가추세, 당HPMC함량위7.5wt%시체462MPa;2200℃보온1h소결도자관재적치밀도수착HPMC함량적개변몰유명현적변화. 채용량보소결법득도적탄화규관재체적밀도종3.00g/cm~3증가도3.07g/cm~3, 평균경향항외압강도체540MPa, 치밀도가체95.9%. 포광면경화학부식후적현미결구표명탄화규과립출현이상장대, 유부분판상정립출현.
Silicon carbide tube was extruded and pressureless-sintered using hydroxypropyl methylcellulose (HPMC) as the main organic plasticizer. The effect of HPMC contents on the properties of the sintered SiC tubes and the microstructure evolution in the different sintering system were systematically studied. The results show that the radial crushing strength of SiC green bodies increases with increasing HPMC content while the average radial crushing strength obtain maximum of 462MPa with 7.5wt% HPMC. The relative density of the SiC tube sintered at 2200℃ and hold for 1h changes little with different content of HPMC obviously. The density of the sintered SiC tube in two-step sintering method increases from 3.00g/cm~3 to 3.07g/cm~3, and the average radial crushing strength and relative density reach 540MPa and 95.9%, respectively. The microstructure of the chemical etched surface indicate the abnormal growth of the SiC particles and the appearance of the plate-like grains.