CAJ | 학술논문

针对应用于850 nm光通信中的10/100 Mbit/s收发器,提出采用0.5μm标准CMOS工艺对其光接收芯片实现Si基单片集成.整体芯片面积为0.6 mm~2,共集成了一个双光电二极管的(DPD)光电探测器和一个跨阻前置放大电路,功耗为100 mW,并给出了具体的测试性能结果.结果表明,在850 nm光照下,光接收芯片带宽达到53 MHz,工作速率为72 Mbit/s.重点介绍了DPD光电探测器的原理和结构,并给出了相应的制造过程和电路等效模型,对整个光接收芯片进行了多种实用性测试,可以满足系统的性能要求.
침대응용우850 nm광통신중적10/100 Mbit/s수발기,제출채용0.5μm표준CMOS공예대기광접수심편실현Si기단편집성.정체심편면적위0.6 mm~2,공집성료일개쌍광전이겁관적(DPD)광전탐측기화일개과조전치방대전로,공모위100 mW,병급출료구체적측시성능결과.결과표명,재850 nm광조하,광접수심편대관체도53 MHz,공작속솔위72 Mbit/s.중점개소료DPD광전탐측기적원리화결구,병급출료상응적제조과정화전로등효모형,대정개광접수심편진행료다충실용성측시,가이만족계통적성능요구.
Monolithically integrated optical reeeiver was designed in 0.5 μm standard CMOS technology, used in 850 nm optical transceivers of 10/100 Mbit/s. The chip size is 0.6 mm~2, integrating a double photodiode (DPD) detector and a transimpedance preamplifier. The power dissipation is 100 mW, and the result of test about OEIC was given. Test results show that the optical receiver has a bandwidth of 53 MHz and the bit rate of 72 Mbit/s in 850 nm light. The principle and structure of the DPD was introduced, the corresponding manufacturing process and circuit equivalent model were given. The OEIC meets the system performance requirements.