CAJ | 학술논문

利用二维模拟软件对部分耗尽SoI器件中的非对称掺杂沟道效应进行了模拟.详细地研究了该结构器件的电学性能,如输出特性,击穿特性.通过本文模拟发现部分耗尽SOI非对称掺杂沟道相比传统的部分耗尽SOI,能抑制浮体效应,改善器件的击穿特性.同时跟已有的全耗尽SOI非对称掺杂器件相比,部分耗尽器件性能随参数变化,在工业应用上具有可预见性和可操作性.因为全耗尽器件具有非常薄的硅膜,而这将引起如前栅极跟背栅极的耦合效应和热电子退化等寄生效应.
이용이유모의연건대부분모진SoI기건중적비대칭참잡구도효응진행료모의.상세지연구료해결구기건적전학성능,여수출특성,격천특성.통과본문모의발현부분모진SOI비대칭참잡구도상비전통적부분모진SOI,능억제부체효응,개선기건적격천특성.동시근이유적전모진SOI비대칭참잡기건상비,부분모진기건성능수삼수변화,재공업응용상구유가예견성화가조작성.인위전모진기건구유비상박적규막,이저장인기여전책겁근배책겁적우합효응화열전자퇴화등기생효응.
Asymmetric doping channel (AC) partially depleted (PD) silicon-on-insulator (SOI) devices are simulated using two-dimensional simulation software. The electrical characteristics such as the output characteristics and the breakdown voltage are studied in detail. Through simulations,it is found that the AC PD SOI device can suppress the floating effects and improve the breakdown characteristics over conventional partially depleted silicon-on-insulator devices. Also compared to the reported AC FD SOI device, the performance variation with device parameters is more predictable and operable in industrial applications. The AC FD SOI device has thinner silicon film, which causes parasitical effects such as coupling effects between the front gate and the back gate and hot electron degradation effects.