CAJ | 학술논문

采用溶胶-凝胶(Sol-Gel)法在Pt/Ti/SiO_2/Si衬底上制备Bi_(3.15)Nd_(0.85)Ti_3O_(12)薄膜,发现制备的薄膜具有单一的钙钛矿晶格结构,且表面平整致密.对Bi_(3.15)Nd_(0.85)Ti_3O_(12)薄膜的电学性能进行了研究.结果表明,室温下,在测试频率1 MHz时,其介电常数为213,介电损耗为0.085;在测试电压为350 kV/cm,其剩余极化值、矫顽场强分别为39.1 μC/cm~2、160.5 kV/cm;表现出良好的抗疲劳特性和绝缘性能.
채용용효-응효(Sol-Gel)법재Pt/Ti/SiO_2/Si츤저상제비Bi_(3.15)Nd_(0.85)Ti_3O_(12)박막,발현제비적박막구유단일적개태광정격결구,차표면평정치밀.대Bi_(3.15)Nd_(0.85)Ti_3O_(12)박막적전학성능진행료연구.결과표명,실온하,재측시빈솔1 MHz시,기개전상수위213,개전손모위0.085;재측시전압위350 kV/cm,기잉여겁화치、교완장강분별위39.1 μC/cm~2、160.5 kV/cm;표현출량호적항피로특성화절연성능.
The Bi_(3.15)Nd_(0.85)Ti_3O_(12) thin films were fabricated on the Pt/Ti/SiO_2/Si substrates by using Sol-Gel method. The thin films showed a perovskite phase and dense microstructure. The electric performance of Bi_(3.15)Nd_(0.85)Ti_3O_(12) thin film was studied. The result showed that he dielectric constant and the dissipation factor were about 213 and 0.085 at 1 MHz at room temperature, respectively. The remnant polarizations (2P_r) and coercive field (2E_c) of the Bi_(3.15)Nd_(0.85)Ti_3O_(12) thin films were 39.1 μC/cm~2 and 160.5 kV/cm, respectively, under an applied field of 350 kV/cm. Also, the films showed fatigue-free and good insulating behavior.