CAJ | 학술논문

本文研究了自分离硅微通道(self lift-off silicon microchannels)的氧化问题.自分离是在特定的实验条件下,在完成电化学刻蚀后,硅微通道可以自动和衬底分离的一种新技术.研究发现,在使用传统的干氧-湿氧-干氧氧化化过程中,硅微通道出现了弯曲变形的现象.微通道越薄,其形变越大.通过使用较厚的硅微通道以及在干-湿-干氧化过程之前增加了干氧,以及先进行激光切割的步骤,改善和基本消除了弯曲变形的现象.
본문연구료자분리규미통도(self lift-off silicon microchannels)적양화문제.자분리시재특정적실험조건하,재완성전화학각식후,규미통도가이자동화츤저분리적일충신기술.연구발현,재사용전통적간양-습양-간양양화화과정중,규미통도출현료만곡변형적현상.미통도월박,기형변월대.통과사용교후적규미통도이급재간-습-간양화과정지전증가료간양,이급선진행격광절할적보취,개선화기본소제료만곡변형적현상.
The oxidation of the self lift-off silicon microchannels is studied. Self lift-off silicon micro-channels are fabricated by a new technology; under certain experimental conditions, the silicon micro-channels can lift off from the substrate automatically after electrochemical etching. In the process of the traditional dry-wet-dry oxidation, damages and distortion of the silicon microchannels occurred. It was found that the thinner the silicon microchannels, the more serious the distortion and damages are. By u-sing thicker silicon microchannels and adding a procedure of dry oxidation before the dry-wet-dry oxi-dation, the damages and distortion of the silicon microchannels can be eliminated.