CAJ | 학술논문

用熔体外延（ME）法在InAs衬底上生长了InAsSb外延层，用扫描电子显微镜（SEM）观察了样品的横截面，并测量出外延层的厚度达到100μm，用X-射线衍射（XRD）谱研究了InAsSb外延层的结构性质。测量结果表明，InAs／InAs0．023Sbo1977单晶具有相当完美的晶体取向结构及良好的结晶质量，这可能得益于100ktm的外延层厚度基本消除了外延层与衬底之间晶格失配的影响。电子探针微分析（EPMA）测量的元素分布图像显示，Sb（锑）元素在外延层中的分布相当均匀。
용용체외연（ME）법재InAs츤저상생장료InAsSb외연층，용소묘전자현미경（SEM）관찰료양품적횡절면，병측량출외연층적후도체도100μm，용X-사선연사（XRD）보연구료InAsSb외연층적결구성질。측량결과표명，InAs／InAs0．023Sbo1977단정구유상당완미적정체취향결구급량호적결정질량，저가능득익우100ktm적외연층후도기본소제료외연층여츤저지간정격실배적영향。전자탐침미분석（EPMA）측량적원소분포도상현시，Sb（제）원소재외연층중적분포상당균균。
The InAsSb epilayers were successfully grown cross section of an InAsSb sample was observed by SEM, on InAs substrate using melt epitaxy （ME） . The and the result showed that the thickness of InAsSb epilayer reaches 100μm. The structural property of InAsSb epilayer were researched by X-ray diffraction （XRD） spectra. The results demonstrates that the InAs/InAso.023Sbo.977 epilayer have fairly perfect crystal orientation structure, and the results indicate the high quality of InAsSb epilayers. All this may benefited from the influence of lattice mismatch between the InAsSb epilayer and the InAs substrate were almostly eliminated because of the thickness of InAsSb epilayers reaches 100μm. A figure of distribution tendency of compositions measured by an electroprobe microanalyzer （EPMA） observes that the distribution of Sb in InAsSb epilayer is fairly homogeneous.