半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2010年
5期
469-472
,共4页
电阻率%电容法%厚度测试%电介质常数%影响
電阻率%電容法%厚度測試%電介質常數%影響
전조솔%전용법%후도측시%전개질상수%영향
resistivity%capacitance%thickness test%electric medium constant%influence
在对电容法测量Si片厚度的原理分析基础上,根据电阻率与介质介电常数ε的对应关系,分析了用电容法测试Si片厚度时,电阻率及电阻率均匀性对测试结果的影响,并采用千分尺(有接触测试)、ADE6034及Wafer Check 7000(电容法测试)分别对不同电阻率及电阻率均匀性的样品进行测试比对.实验结果证明,电容法可以测量高电阻率Si片的厚度等几何参数,但不能测量电阻率均匀率较差的Si片.同时,校正电容法测量设备时,以校正样片电阻率与被测Si片电阻率范围接近为原则.
在對電容法測量Si片厚度的原理分析基礎上,根據電阻率與介質介電常數ε的對應關繫,分析瞭用電容法測試Si片厚度時,電阻率及電阻率均勻性對測試結果的影響,併採用韆分呎(有接觸測試)、ADE6034及Wafer Check 7000(電容法測試)分彆對不同電阻率及電阻率均勻性的樣品進行測試比對.實驗結果證明,電容法可以測量高電阻率Si片的厚度等幾何參數,但不能測量電阻率均勻率較差的Si片.同時,校正電容法測量設備時,以校正樣片電阻率與被測Si片電阻率範圍接近為原則.
재대전용법측량Si편후도적원리분석기출상,근거전조솔여개질개전상수ε적대응관계,분석료용전용법측시Si편후도시,전조솔급전조솔균균성대측시결과적영향,병채용천분척(유접촉측시)、ADE6034급Wafer Check 7000(전용법측시)분별대불동전조솔급전조솔균균성적양품진행측시비대.실험결과증명,전용법가이측량고전조솔Si편적후도등궤하삼수,단불능측량전조솔균균솔교차적Si편.동시,교정전용법측량설비시,이교정양편전조솔여피측Si편전조솔범위접근위원칙.
Through capacitance method based on its principle analysis,according to the corresponding relation between the resistivity and the electric medium constant ε,the influence on the result of wafer thickness test by their resistivity and uniformity is analyzed.The test results between samples with different resistivities and uniformities are compared,using micrometer(the"touch test"method) and ADE6304 or Wafer Check 7000(the capacitance method) respectively.The test result proves that the geometric parameter of the wafers with high resistivity can be measured by capacitance method,but the wafers with less resistivity uniformity can't be measured.Furthermore,the proximity principle of the range of the sample resistivity and the wafer resistivity to be mcasured must be fellowed for correcting the capacitance test set.
