CAJ | 학술논문

鉴于化学气相沉积生长方法成本高且很难制备出大面积均匀的纳米ZnO薄膜,采用成本低的丝网印刷方法制备了大面积纳米ZnO阴极薄膜.测试研究了分散、热烧结、退火处理对ZnO薄膜的场致发射特性的影响,提出了低成本丝网印刷制备大面积ZnO薄膜阴极热烧结和退火处理的工艺,根据样品的形貌、发射特性和均匀稳定发光的阳极可以判断,最高温度843K的热烧结和823K、10min的退火处理适实用于制作大面积纳米ZnO薄膜场致发射阴极.
감우화학기상침적생장방법성본고차흔난제비출대면적균균적납미ZnO박막,채용성본저적사망인쇄방법제비료대면적납미ZnO음겁박막.측시연구료분산、열소결、퇴화처리대ZnO박막적장치발사특성적영향,제출료저성본사망인쇄제비대면적ZnO박막음겁열소결화퇴화처리적공예,근거양품적형모、발사특성화균균은정발광적양겁가이판단,최고온도843K적열소결화823K、10min적퇴화처리괄실용우제작대면적납미ZnO박막장치발사음겁.
The large area of nano-ZnO film can't be received by CVD growth for high cost Lower cost screen-printed large area nano-ZnO film cathode is fabricated. The influence factors of field emission characteristic of nano-ZnO film is tested and studied. According to the morphology of cathode samples and stability and uniformity of the anode luminescent, the technics of thermal sintering and annealing treatment of lower cost screen-printed large area are presented. The advantaged thermal sinter temperature for nano-ZnO film field emission is 843K, the condign annealing temperature and time are 823K and 10min. The optimal thermal sintering and annealing treatment intentionally improve the electron field emission and can be used in fabricating the nano-ZnO film cathode of field emission.