液晶与显示
液晶與顯示
액정여현시
CHINESE JOURNAL OF LIQUID CRYSTALS AND DISPLAYS
2007年
5期
541-547
,共7页
张哲娟%孙卓%张燕萍%杨介信%冯涛%陈奕卫
張哲娟%孫卓%張燕萍%楊介信%馮濤%陳奕衛
장철연%손탁%장연평%양개신%풍도%진혁위
碳纳米管%场发射%球磨%空气氧化
碳納米管%場髮射%毬磨%空氣氧化
탄납미관%장발사%구마%공기양화
carbon nanotube%field emission%ball milling%air oxidation
以镍金属为催化剂,在600 ℃条件下,采用化学气相沉积法(CVD)制备碳纳米管.将制得的碳纳米管用高能球磨法处理0.5~1 h后,以空气氧化法进行提纯,并研究了氧化温度对碳纳米管形貌和场发射性能的影响.用扫描电镜、Raman光谱分别对300~500 ℃的氧化提纯后的碳纳米管的形貌和结构进行了表征.结果表明:碳纳米管的场发射性能随温度的升高而升高,经400~450 ℃加热10 min后,非晶碳成分减少,碳管纯度得到提高,场发射性能达到最高;当氧化温度继续升高时,碳纳米管的缺陷密度增大,非晶化程度增加,场发射特性变差.因此,通过控制氧化温度可以有效提高碳纳米管的纯度和场发射性能.
以鎳金屬為催化劑,在600 ℃條件下,採用化學氣相沉積法(CVD)製備碳納米管.將製得的碳納米管用高能毬磨法處理0.5~1 h後,以空氣氧化法進行提純,併研究瞭氧化溫度對碳納米管形貌和場髮射性能的影響.用掃描電鏡、Raman光譜分彆對300~500 ℃的氧化提純後的碳納米管的形貌和結構進行瞭錶徵.結果錶明:碳納米管的場髮射性能隨溫度的升高而升高,經400~450 ℃加熱10 min後,非晶碳成分減少,碳管純度得到提高,場髮射性能達到最高;噹氧化溫度繼續升高時,碳納米管的缺陷密度增大,非晶化程度增加,場髮射特性變差.因此,通過控製氧化溫度可以有效提高碳納米管的純度和場髮射性能.
이얼금속위최화제,재600 ℃조건하,채용화학기상침적법(CVD)제비탄납미관.장제득적탄납미관용고능구마법처리0.5~1 h후,이공기양화법진행제순,병연구료양화온도대탄납미관형모화장발사성능적영향.용소묘전경、Raman광보분별대300~500 ℃적양화제순후적탄납미관적형모화결구진행료표정.결과표명:탄납미관적장발사성능수온도적승고이승고,경400~450 ℃가열10 min후,비정탄성분감소,탄관순도득도제고,장발사성능체도최고;당양화온도계속승고시,탄납미관적결함밀도증대,비정화정도증가,장발사특성변차.인차,통과공제양화온도가이유효제고탄납미관적순도화장발사성능.
Multiwall carbon nanotubes (CNTs) were prepared by the catalytic decomposition of acetylene at 600 ℃ using Ni as catalysts, and then were treated by ball-milling for 0.5~1 h. The treated CNTs were purified by removing most of amorphous carbon using air oxidation method at 300~500 ℃. The morphologies and field emission properties of the oxidized CNTs were changed, mainly depending on the oxidation temperature. The field emission current density was increased to a maximum, and then decreased with increasing the oxidation tempe-rature. When the CNTs were oxidized at 400 ℃ for 10 min, the field emission current density reached to 126.5 μA/cm2 at the applied field of 4.41 V/μm. As a result, the most of amorphous carbon was removed and the purity of the CNTs was improved greatly. When the oxidized temperature is 400~450 ℃, the purified CNTs showed excellent field emission properties, such as high emission current density and uniform luminescence spots distribution.