电子工业专用设备
電子工業專用設備
전자공업전용설비
EQUIPMENT FOR ELECTRONIC PRODUCTS MANUFACTURING
2006年
4期
23-30
,共8页
极紫外光刻%45nm技术节点%光掩模%掩模材料%掩模制作
極紫外光刻%45nm技術節點%光掩模%掩模材料%掩模製作
겁자외광각%45nm기술절점%광엄모%엄모재료%엄모제작
EUVL%45 nm node technology%Lithography%Photomask%Mask materials%Mask process
通过对掩模衬底材料和掩模加工工艺利用硬性分界条件可满足45 nm及以下技术节点的掩模要求.此外类似于折射指数、平整度、成分、均匀性和应力等衬底材料的固有特性严重地影响到掩模加工性能和光刻性能.评述了45 nm及以下技术节点对空白材料,掩模及晶片层面的要求.指出了对于关键问题及出现的问题的可仿效实施的方法,最后研究了集成用于高效光掩模工厂的掩模材料的实际情况分析.
通過對掩模襯底材料和掩模加工工藝利用硬性分界條件可滿足45 nm及以下技術節點的掩模要求.此外類似于摺射指數、平整度、成分、均勻性和應力等襯底材料的固有特性嚴重地影響到掩模加工性能和光刻性能.評述瞭45 nm及以下技術節點對空白材料,掩模及晶片層麵的要求.指齣瞭對于關鍵問題及齣現的問題的可倣效實施的方法,最後研究瞭集成用于高效光掩模工廠的掩模材料的實際情況分析.
통과대엄모츤저재료화엄모가공공예이용경성분계조건가만족45 nm급이하기술절점적엄모요구.차외유사우절사지수、평정도、성분、균균성화응력등츤저재료적고유특성엄중지영향도엄모가공성능화광각성능.평술료45 nm급이하기술절점대공백재료,엄모급정편층면적요구.지출료대우관건문제급출현적문제적가방효실시적방법,최후연구료집성용우고효광엄모공엄적엄모재료적실제정황분석.
Meeting the mask requirements for 45 nm node and beyond impose tough boundary conditions on the mask blank materials and mask process. Moreover, the intrinsic properties of the blank materials like refractive index, flatness, composition, uniformity and stress influence significantly mask process performance and lithographic performance.Our paper will review the requirements for the technology nodes on the blank, mask and wafer level.It addresses exemplarily viable solutions for critical problems as well as open issues. Analysis of the mask materials for integration into a commercial photomask facility will be explored for practical cases.
