CAJ | 학술논문

用微波等离子体化学气相沉积(MWPCVD)制备金刚石薄膜涂层之前，采用盐酸、硝酸化学腐蚀和氢-氧等离子体对WC-Co硬质合金(YG6)基体表面进行去钴预处理。扫描电子显微镜形貌观察和X射线衍射谱分析都表明，与化学腐蚀方法相比，氢-氧等离子体处理具有独特的表面去钴效果，沉积金刚石薄膜的喇曼谱分析更证实其对涂层质量的改善，且对MWPCVD过程而言有其技术上的一些优越性。
용미파등리자체화학기상침적(MWPCVD)제비금강석박막도층지전，채용염산、초산화학부식화경-양등리자체대WC-Co경질합금(YG6)기체표면진행거고예처리。소묘전자현미경형모관찰화X사선연사보분석도표명，여화학부식방법상비，경-양등리자체처리구유독특적표면거고효과，침적금강석박막적나만보분석경증실기대도층질량적개선，차대MWPCVD과정이언유기기술상적일사우월성。
Etching-Co pretreatment of WC-Co cemented carbide(YG6)substrate surfaces is prerequisite for coating diamond films by microwave plasma chemical vapor deposition.The strengths and weakness of different etching-Co pretreatment,including the chemical etching with either hydrochloric acid or with nitric acid and the H2-O2 plasma etching were studied with scanning electron spectroscopy,X-ray diffraction and Raman spectroscopy.The results show that H2-O2 plasma etching results in more effective removing of Co and better diamond coating on the substrate than chemical etching.