CAJ | 학술논문

采用方盒形件拉深成形的方法,对高强度钢板SPFC590在干摩擦和半干摩擦条件下的拉深粘模行为进行研究.选用的模具材料分为2类:一类为无涂层模具SKD11,SLD和等温淬火球墨铸铁ADI;另一类为以SKD11为基体的涂层模具TiCN(PVD),TiCN(CVD),TiC(CVD)和DLC.Si(DC-PACVD).采用无涂层模具时,在半干摩擦条件下仅少数几次拉深就出现宏观粘模现象,模具上粘模产生的位置位于凹模直边底部附近,而没有出现在凹模圆角处,并随着拉深次数的增加向上扩展;拉深工件上粘模产生的位置则位于工件项部的直边和圆角部分连接处,并随着拉深的进行向下扩展;涂层模具经120次拉深后均未发生明显的粘模,但TiCN(PVD)和TiCN(CVD)涂层模具在凹模底部附近出现了微观粘着物;TiCN(CVD)和DLC-Si(DC-PACVD)涂层模具拉深1 000次后均未出现明显粘模现象,但TiCN(CVD)涂层模具上出现了微观粘着物,而DLC-Si(DC-PACVD)涂层模具上没有任何粘着物产生.
채용방합형건랍심성형적방법,대고강도강판SPFC590재간마찰화반간마찰조건하적랍심점모행위진행연구.선용적모구재료분위2류:일류위무도층모구SKD11,SLD화등온쉬화구묵주철ADI;령일류위이SKD11위기체적도층모구TiCN(PVD),TiCN(CVD),TiC(CVD)화DLC.Si(DC-PACVD).채용무도층모구시,재반간마찰조건하부소수궤차랍심취출현굉관점모현상,모구상점모산생적위치위우요모직변저부부근,이몰유출현재요모원각처,병수착랍심차수적증가향상확전;랍심공건상점모산생적위치칙위우공건항부적직변화원각부분련접처,병수착랍심적진행향하확전;도층모구경120차랍심후균미발생명현적점모,단TiCN(PVD)화TiCN(CVD)도층모구재요모저부부근출현료미관점착물;TiCN(CVD)화DLC-Si(DC-PACVD)도층모구랍심1 000차후균미출현명현점모현상,단TiCN(CVD)도층모구상출현료미관점착물,이DLC-Si(DC-PACVD)도층모구상몰유임하점착물산생.
The drawing galling behavior of a high tensile strength steel sheet SPFC590 was investigated under semi-dry and dry condition by the square cup drawing method.A cold alloy tool steel (SKD11, SLD) and ADI were used as the non-coated die.TiCN(PVD), TiCN(CVD), TiC(CVD) and DLC-Si (DC-PACVD) coated on SKD11 were used as the coated die.Using the non-coated dies in semi-dry, the macro-scale galling can clearly observed on die and drawn cup surface after a few drawing cycles.The galling on the die surface occurs at the bottom point of the straight boundary and not at the corner of the die, and grows upward with the drawing cycles.On the drawn cup, the galling starts at the top point of the boundary between the straight and corner edge, and grows downward.Using the coated dies, no remarkable galling is observed on die surface after 120 drawing cycles, but the micro-scale adhesion can be observed on TiCN(PVD) and TiCN(CVD) at the same boundary as the non-coated die.No conspicuous galling can be observed on TiC(CVD) and DLC-Si(DC-PACVD) ever after 1 000 cycles, but micro-scale adhesion can be recognized on TiC(CVD).No adhesion can be found on DLC-Si(DC-PACVD).