中国科学A辑(英文版)
中國科學A輯(英文版)
중국과학A집(영문판)
SCIENCE IN CHINA
2002年
5期
655-660
,共6页
徐现刚%崔得良%唐喆%郝霄鹏%K.Heime
徐現剛%崔得良%唐喆%郝霄鵬%K.Heime
서현강%최득량%당철%학소붕%K.Heime
MOVPE%InGaAs/InP%strain%TBAs%TBP
Lattice-matched InGaAs/InP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) as the group Ⅴ sources. The results of X-ray diffraction on InGaAs/InP single herterostructure show that there is a compressive-strained interfacial layer at the InP-to-lnGaAs interface. X-ray diffraction of InGaAs/InP superlattices is successfully simulated by using the same interfacial layer. TBAs purging of InP surface has a significant influence on the interfacial strain. A novel gas switching sequence, which switches group Ⅲ to the run line earlier than TBAs, is proposed to reduce this interfacial strain. As a result,the average compressive strain of superlattices decreases, and a blue shift of photoluminescence (PL)peak energy and narrowing in PL width are obtained.
