发光学报
髮光學報
발광학보
CHINESE JOURNAL OF LUMINESCENCE
2001年
z1期
1-4
,共4页
Si掺杂GaN%MOVPE%光致发光特性
Si摻雜GaN%MOVPE%光緻髮光特性
Si참잡GaN%MOVPE%광치발광특성
用MOVPE方法采取一种两步生长过程生长了未掺杂和Si掺杂的GaN.在生长了一个20nm厚的缓冲层后,外延生长了1μm厚的立方GaN外延层.利用二次离子质谱测定了掺杂的程度.并用X射线衍射和光致发光测量来表征了未掺杂和Si掺杂GaN的结构和光学质量.
用MOVPE方法採取一種兩步生長過程生長瞭未摻雜和Si摻雜的GaN.在生長瞭一箇20nm厚的緩遲層後,外延生長瞭1μm厚的立方GaN外延層.利用二次離子質譜測定瞭摻雜的程度.併用X射線衍射和光緻髮光測量來錶徵瞭未摻雜和Si摻雜GaN的結構和光學質量.
용MOVPE방법채취일충량보생장과정생장료미참잡화Si참잡적GaN.재생장료일개20nm후적완충층후,외연생장료1μm후적립방GaN외연층.이용이차리자질보측정료참잡적정도.병용X사선연사화광치발광측량래표정료미참잡화Si참잡GaN적결구화광학질량.
Si-doped and undoped cubic GaN were grown by low-pressure metalorganic vapor phase epitaxy using a two-step growth process. After the deposition of a 20nm-thick buffer layer, an about 1μm-thick Si-doped cubic GaN epitaxial layer was deposited. Doping level was determined by secondary ion mass spectroscopy measurements. X-ray diffraction and photoluminescence measurements were used to characterize the structural and optical quality of the undoped and the Si-doped cubic GaN.
