光学精密工程
光學精密工程
광학정밀공정
OPTICS AND PRECISION ENGINEERING
2009年
7期
1602-1608
,共7页
赵宏伟%杨柏豪%赵宏健%黄虎
趙宏偉%楊柏豪%趙宏健%黃虎
조굉위%양백호%조굉건%황호
单晶硅薄片%纳米力学%纳米压痕%硬度%纳米级切削加工
單晶硅薄片%納米力學%納米壓痕%硬度%納米級切削加工
단정규박편%납미역학%납미압흔%경도%납미급절삭가공
single crystal silicon wafer%nano meter mechanics%nanoindentation%hardness%cutting process in nano-scale
对材料纳米力学性能测试手段进行了研究,着重分析了纳米压痕技术的原理和方法.结合纳米压痕技术,采用尖端四面体Vickers型单晶金刚石压头对单晶硅(100)晶面进行了纳米压痕实验测试.实验发现,在载荷为1 000 mN时,晶体硅出现了明显的裂纹和脆性断裂;而在载荷低于80 mN的情况下,晶体硅则表现出延性特性.此外,在不同载荷条件下对晶体硅的硬度进行了实验测试,测试结果发现,不同载荷条件下晶体硅的硬度测量值存在较大的差异,认为导致这种差异的原因在于压痕区域晶体硅所受压力不同,使得晶体硅内部结构发生了改变,较为准确的单晶硅的硬度测量值为15.7 GPa.
對材料納米力學性能測試手段進行瞭研究,著重分析瞭納米壓痕技術的原理和方法.結閤納米壓痕技術,採用尖耑四麵體Vickers型單晶金剛石壓頭對單晶硅(100)晶麵進行瞭納米壓痕實驗測試.實驗髮現,在載荷為1 000 mN時,晶體硅齣現瞭明顯的裂紋和脆性斷裂;而在載荷低于80 mN的情況下,晶體硅則錶現齣延性特性.此外,在不同載荷條件下對晶體硅的硬度進行瞭實驗測試,測試結果髮現,不同載荷條件下晶體硅的硬度測量值存在較大的差異,認為導緻這種差異的原因在于壓痕區域晶體硅所受壓力不同,使得晶體硅內部結構髮生瞭改變,較為準確的單晶硅的硬度測量值為15.7 GPa.
대재료납미역학성능측시수단진행료연구,착중분석료납미압흔기술적원리화방법.결합납미압흔기술,채용첨단사면체Vickers형단정금강석압두대단정규(100)정면진행료납미압흔실험측시.실험발현,재재하위1 000 mN시,정체규출현료명현적렬문화취성단렬;이재재하저우80 mN적정황하,정체규칙표현출연성특성.차외,재불동재하조건하대정체규적경도진행료실험측시,측시결과발현,불동재하조건하정체규적경도측량치존재교대적차이,인위도치저충차이적원인재우압흔구역정체규소수압력불동,사득정체규내부결구발생료개변,교위준학적단정규적경도측량치위15.7 GPa.
The testing methods for nanomechanic properties of materials widely used in machining in micro-nano scale, MEMS/NEMS, biomedical engineering, material sciences etc. are researched and the main principle and methods of nanoindentation technology are analyzed. By a four-sided Vickers diamond indenter with a sharpened tip, the nanoindentation experiments are undertaken to test the single crystal silicon on (100) crystal surface with the help of a nanoindentation tester.Experiments show that the brittle crack is occurred around the nanoindentation zone on silicon surface when the maximum load of indentation is 1 000 mN. However, the crystal silicon shows plastic property when the maximum load of indentation is below 80 mN. Moreover, the hardness test of the crystal silicon with different loads is carried out, and the testing results show that the hardness is quite different in different loads.It is explained that the appeared phenomenon may come from the phase transformation under the nanoindentation zone inside the silicon wafer, because the pressure around the nanoindentation zone is different. The testing result of the hardness of single crystal silicon is about 15.7 GPa.