红外与毫米波学报
紅外與毫米波學報
홍외여호미파학보
JOURNAL OF INFRARED AND MILLIMETER WAVES
2012年
1期
5-10
,共6页
窦亚楠%何悦%马晓光%乔琦%陈肖静%王永谦%陈绍斌%褚君浩
竇亞楠%何悅%馬曉光%喬琦%陳肖靜%王永謙%陳紹斌%褚君浩
두아남%하열%마효광%교기%진초정%왕영겸%진소빈%저군호
非晶碳化硅%红外光谱%均匀性%甲烷流量
非晶碳化硅%紅外光譜%均勻性%甲烷流量
비정탄화규%홍외광보%균균성%갑완류량
a-SiC : H%infrared spectrum%uniformity%CH4 flow rate
本文研究了甲烷流量对作为工业非晶硅光伏组件的p层材料—非晶碳化硅结构和光学性质的影响.p层非晶碳化硅薄膜采用硅烷和甲烷混合气体在射频等离子体增强化学气相沉积(RF-PECVD)设备中沉积制得,该设备是应用材料公司制造的尺寸为2.2m×2.6m的8.5代系统.采用红外光谱和透射/反射谱分析与沉积工艺相关的键结构和光学性质.相同工艺条件下,当甲烷含量从3000 sccm增加到8850 sccm,p层非晶碳化硅薄膜的光学带隙逐步增加.p层非晶碳化硅薄膜的沉积速率随甲烷流量的增加而逐渐减小,其原因是硅烷-甲烷等离子体中SiH3粒子的减少.文中还通过在不同位置取样和分析沉积速率研究了大面积薄膜的均匀性.
本文研究瞭甲烷流量對作為工業非晶硅光伏組件的p層材料—非晶碳化硅結構和光學性質的影響.p層非晶碳化硅薄膜採用硅烷和甲烷混閤氣體在射頻等離子體增彊化學氣相沉積(RF-PECVD)設備中沉積製得,該設備是應用材料公司製造的呎吋為2.2m×2.6m的8.5代繫統.採用紅外光譜和透射/反射譜分析與沉積工藝相關的鍵結構和光學性質.相同工藝條件下,噹甲烷含量從3000 sccm增加到8850 sccm,p層非晶碳化硅薄膜的光學帶隙逐步增加.p層非晶碳化硅薄膜的沉積速率隨甲烷流量的增加而逐漸減小,其原因是硅烷-甲烷等離子體中SiH3粒子的減少.文中還通過在不同位置取樣和分析沉積速率研究瞭大麵積薄膜的均勻性.
본문연구료갑완류량대작위공업비정규광복조건적p층재료—비정탄화규결구화광학성질적영향.p층비정탄화규박막채용규완화갑완혼합기체재사빈등리자체증강화학기상침적(RF-PECVD)설비중침적제득,해설비시응용재료공사제조적척촌위2.2m×2.6m적8.5대계통.채용홍외광보화투사/반사보분석여침적공예상관적건결구화광학성질.상동공예조건하,당갑완함량종3000 sccm증가도8850 sccm,p층비정탄화규박막적광학대극축보증가.p층비정탄화규박막적침적속솔수갑완류량적증가이축점감소,기원인시규완-갑완등리자체중SiH3입자적감소.문중환통과재불동위치취양화분석침적속솔연구료대면적박막적균균성.
The effect of CH4 flow rate on the structural and optical properties of boron-doped amorphous silicon carbon films as window p-layer in the industrial hydrogenated amorphous silicon solar module was investigated.The p-layer amorphous hydrogenated silicon carbon films were deposited from SiH4-CH4 gas mixtures in the Applied Materials SUNFAB radio frequency-plasma enhanced chemical vapor deposition Gen8.5 system with dimensions of 2.2 m 2.6 m.Infrared and transmittance/reflectance spectra were employed to analyze the bond configurations and optical properties of the films associating with structures of the p-layer films which are sensitive to the deposition condition.The optical band gap of the p-layer films increased as the CH4 flow rate ranged from 3000 sccm to 8850 sccm with other deposition conditions unchanged.With increasing CH4 flow rate,the deposition rate of p-layer amorphous silicon carbon films decreased slowly,because of the reduction of SiH3 radical in the SiH4-CH4 plasmas.The uniformity of the hydrogenated amorphous silicon carbon films was also investigated,by sampling and analyzing the deposition rate on four different locations of the large area films.