CAJ | 학술논문

本文将慢正电子湮灭多普勒展宽谱技术,应用于对SiC表面热氧化生长的SiO_2特性的研究.S参数和W参数在退火前后的变化,直观的反映出SiO_2/SiC表面氧化层中空位型缺陷浓度的改变.通过与SiO_2/Si样品的对比,证实C元素及其诱生空位型缺陷的存在,很可能是影响SiO_2/SiC氧化层质量和SiC MOS击穿特性的重要因素,后退火工艺可以提高SiO_2/SiC中氧化层的致密性.实验表明,慢正电子湮灭多普勒展宽谱是研究热氧化SiO_2特性的有效手段.
본문장만정전자인멸다보륵전관보기술,응용우대SiC표면열양화생장적SiO_2특성적연구.S삼수화W삼수재퇴화전후적변화,직관적반영출SiO_2/SiC표면양화층중공위형결함농도적개변.통과여SiO_2/Si양품적대비,증실C원소급기유생공위형결함적존재,흔가능시영향SiO_2/SiC양화층질량화SiC MOS격천특성적중요인소,후퇴화공예가이제고SiO_2/SiC중양화층적치밀성.실험표명,만정전자인멸다보륵전관보시연구열양화SiO_2특성적유효수단.
In this article, positron annihilation Doppler-spread-spectroscopy was used to study the SiO_2 film by thermal oxidation on 6H-SiC.The change of both S parameter and W parameter before and after annealing could show the void-like defects in SiO_2 on SiC. Compared with SiO_2/Si, the existence of carbon atoms and void-like defects in SiO_2 might be the reasons of low breakdown voltage of SiO_2 /SiC MOS structure. The experiments indicated that, post-annealing processing could improve the quality of the SiO_2 layer. It was also indicated that positron annihilation Doppler-spread-spectroscopy was very useful to study the SiO_2 film by thermal oxidation.