CAJ | 학술논문

介绍了一种用于集成电路内部的带隙基准源，它具有8 ppm/℃的温度系数和4 mV／V的电源抑制比。同时，还介绍了一种用于带隙基准源的输出缓冲器。该缓冲器的速度很快，当负载电压波动时，能很快地使其稳定于带隙基准源的输出电压，其压摆率能达到112 V/μs。
개소료일충용우집성전로내부적대극기준원，타구유8 ppm/℃적온도계수화4 mV／V적전원억제비。동시，환개소료일충용우대극기준원적수출완충기。해완충기적속도흔쾌，당부재전압파동시，능흔쾌지사기은정우대극기준원적수출전압，기압파솔능체도112 V/μs。
A bandgap reference is fabricated with 0.35 μm n-well CMOS technology. Operating at an input voltage of 3. 3 V, the bandgap reference has a temperature coefficient of 8 ppm/℃ and a power supply rejection ratio (PSRR) of 4 mV/V in simulation with Spectres and HSpice. At the same time, a buffer suitable for reference output is also presented which can achieve a slew rate of about 112 V/μs. This buffer is used to regain the stability of output voltage as fast as possible after load changes.