CAJ | 학술논문

晶体管的二次击穿线是构成其安全工作区（SOA）的重要曲线,作者对该问题进行了多年的探讨和实验。文章详尽地论述了二次击穿的机理是由于电流或电压应力所引起的破坏性结果。简要叙述了芯片材料、制造与组装工艺对二次击穿的影响,指出了器件的电性能、应用电路以及环境温度与二次击穿的关系,从而为晶体管避免二次击穿提供了方向。最后介绍了一种检测二次击穿的简易方法,并根据所测得的数据描绘了功率晶体管（2SD880、3DD13003）的二次击穿特性曲线。文中还示出了二次击穿造成芯片损伤以及器件发生二次击穿时的曲线照片。
정체관적이차격천선시구성기안전공작구（SOA）적중요곡선,작자대해문제진행료다년적탐토화실험。문장상진지논술료이차격천적궤리시유우전류혹전압응력소인기적파배성결과。간요서술료심편재료、제조여조장공예대이차격천적영향,지출료기건적전성능、응용전로이급배경온도여이차격천적관계,종이위정체관피면이차격천제공료방향。최후개소료일충검측이차격천적간역방법,병근거소측득적수거묘회료공솔정체관（2SD880、3DD13003）적이차격천특성곡선。문중환시출료이차격천조성심편손상이급기건발생이차격천시적곡선조편。
The transistor＇s second breakdown curve is an important curve to constitute its Safety Operation Area（SOA）.This problem has been researched and tested for years.This paper expounds the second breakdown mechanism of transistors with details;It occors because of the devastating results caused by current or voltage stress.The article brie？ y introduces how the chip material,manufacturing and assembly engineer-ing affect the second breakdown of transistors,indicates the relation between thesecond breakdown of transistors and electrical property,application circuit and environmental temperature,therefore provides a direction to avoid the second breakdown of transistor.At last,a simple methodto test the second breakdown is introduced in this paper.Base on the measured data,this article describes the secondary breakdown characteristic curves which form the two types of power transistors（2SD880,3DD13003）.The paper also illustrates clear pictures of damaged chip,and the characteristic curves when the second breakdown happens,for reader＇s reference.