CAJ | 학술논문

用光荧光谱(PL)研究了GaNxAs1-x/G aAs单量子阱(SQW)的光跃迁性质和带阶.通过研究积分荧光强度与激发强度的关系及光谱峰值位置与温度的关系,发现GaNxAs1-x/GaAs单量子阱中的发光是本征带- 带跃迁,并且低温发光是局域激子发光.通过自洽计算发现它的导带带阶(ΔEc)与氮含量的关系不是纯粹的线性关系,其平均变化速率(0.110eV/N%)比文献中报道的要慢得多(0.15 6～0.175eV/N%),此外发现Qc(=ΔEc／ΔEg)随氮含量的变化很小,可以用Qc≈x 0.25来表示.还研究了GaNxAs1-x/GaAs单量子阱中氮含量的变化对能带弯曲参数(b)的影响.
용광형광보(PL)연구료GaNxAs1-x/G aAs단양자정(SQW)적광약천성질화대계.통과연구적분형광강도여격발강도적관계급광보봉 치위치여온도적관계,발현GaNxAs1-x/GaAs단양자정중적발광시본정대- 대약천,병차저온발광시국역격자발광.통과자흡계산발현타적도대대계(ΔEc)여담함 량적관계불시순수적선성관계,기평균변화속솔(0.110eV/N%)비문헌중보도적요만득다(0.15 6～0.175eV/N%),차외발현Qc(=ΔEc／ΔEg)수담함량적변화흔소,가이용Qc≈x 0.25래표시.환연구료GaNxAs1-x/GaAs단양자정중담함량적변화대 능대만곡삼수(b)적영향.
The optical properties and the band lineup in GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) usi ng photoluminescence (PL) technique were investigated. It was found that the low -temperature PL is dominated by the intrinsic localized exciton emission. By f i tting the experimental datawith a simple calculation, band offset of the GaN 0.015As0.985/GaAs heterostructure was estimated. Moreover, ΔEc, t he discontinuity of the conduction band was found to be a nonlinear function of the nitrogen composition (x) and the average variation of ΔEc is abou t 0.110eV per % N, such smaller than that reported on the literature (0.156～0.1 75 eV/N%).In addition, Qc has little change whtn N composition increares, wi th an experimential relation of Qc≈x0.25. The band bowing coefficient (b) was also studied in this paper. The measured band bowing coefficient sh ows a strong function of x,giving an experimental support to the theoretic c alculation of Wei Su-Huai and Zunger Alex (1996).