稀有金属材料与工程
稀有金屬材料與工程
희유금속재료여공정
RARE METAL MATERIALS AND ENGINEERNG
2008年
10期
1693-1695
,共3页
超导电性%薄膜%对称破缺%TFDC
超導電性%薄膜%對稱破缺%TFDC
초도전성%박막%대칭파결%TFDC
superconductivity%thin film%broken symmetry%TFDC
应用Cheng-Born能带对称破缺理论和TFDC(Thomas-Fermi-Dirac-Cheng)电子理论研究了薄膜层内电子的特性.对金属铂上的TiO2膜层来说,TFDC理论指出电子(或空穴)将由金属与膜的间界面一侧迁移到另一侧.根据Cheng-Born对称破缺理论,当能带中只有很少的电子时,则只有极少的角区中存在电子,动量空间即产生对称破缺,从而导致超导电性,并由热力学估算出薄膜超导体的转变温度.结果显示薄膜超导体的转变温度至少比块材超导体的转变温度高一个量级.作者还设计了一个研究薄膜超导电性的实验.
應用Cheng-Born能帶對稱破缺理論和TFDC(Thomas-Fermi-Dirac-Cheng)電子理論研究瞭薄膜層內電子的特性.對金屬鉑上的TiO2膜層來說,TFDC理論指齣電子(或空穴)將由金屬與膜的間界麵一側遷移到另一側.根據Cheng-Born對稱破缺理論,噹能帶中隻有很少的電子時,則隻有極少的角區中存在電子,動量空間即產生對稱破缺,從而導緻超導電性,併由熱力學估算齣薄膜超導體的轉變溫度.結果顯示薄膜超導體的轉變溫度至少比塊材超導體的轉變溫度高一箇量級.作者還設計瞭一箇研究薄膜超導電性的實驗.
응용Cheng-Born능대대칭파결이론화TFDC(Thomas-Fermi-Dirac-Cheng)전자이론연구료박막층내전자적특성.대금속박상적TiO2막층래설,TFDC이론지출전자(혹공혈)장유금속여막적간계면일측천이도령일측.근거Cheng-Born대칭파결이론,당능대중지유흔소적전자시,칙지유겁소적각구중존재전자,동량공간즉산생대칭파결,종이도치초도전성,병유열역학고산출박막초도체적전변온도.결과현시박막초도체적전변온도지소비괴재초도체적전변온도고일개량급.작자환설계료일개연구박막초도전성적실험.
Behavior of electrons inside a thin coating layer is studied.It is based on Cheng-Born theory of broken symmetry and TFDC (Thomas-Fermi-Dirac-Cheng)electron theory.For a specimen(TiO2,say) coated on a conducting metal plate(e.g.platinum),according to the TFDC model,a small group of electrons(or holes)will transfer from one side of boundary to the other.Based on Cheng-Born theory,in ease where only few electrons exist in zone,only a few corners are occupied,broken symmetry in momentum space will occur and lead to advent of superconductivity.Following the general formulation of thermodynamics.an estimate on the transition temperature in two-dimensional space iS made.The result shows that the superconductors in two-dimensions are in general inherent to HTS,Tc of superconductor in two-dimensions would be at least by one order larger than Tc of normal superconductor in three-dimensions.In this text an experiment is designed to look for superconductivity of thin film.