双栅肖特基源漏MOSFET的阈值电压模型
쌍책초특기원루MOSFET적역치전압모형
Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain
  • 万方数据
    半导体学报 반도체학보
    CHINESE JOURNAL OF SEMICONDUCTORS
    2007年 8期 1179-1183 ,共5页

    徐博卷%杜刚%夏志良%曾朗%韩汝琦%刘晓彦

    서박권%두강%하지량%증랑%한여기%류효언

    双栅%肖特基势垒%阈值电压 雙柵%肖特基勢壘%閾值電壓
    쌍책%초특기세루%역치전압
    double-gate%Schottky barrier%threshold voltage
    通过求解泊松方程得到了双栅肖特基势垒MOSFET的解析模型. 这个解析模型包括整个沟道的准二维电势分布和适用于短沟双栅肖特基势垒MOSFET的阈值电压模型.数值模拟器ISE DESSIS验证了模型结果.
    통과구해박송방정득도료쌍책초특기세루MOSFET적해석모형. 저개해석모형포괄정개구도적준이유전세분포화괄용우단구쌍책초특기세루MOSFET적역치전압모형.수치모의기ISE DESSIS험증료모형결과.
    A quasi two-dimensional (2D) analytical model of a double-gate (DG) MOSFET with Schottky source/drain is developed based on the Poisson equation.The 2D potential distribution in the channel is calculated.An expression for threshold voltage for a short-channel DG MOSFET with Schottky S/D is also presented by defining the turn-on condition.The results of the model are verified by the numerical simulator DESSIS-ISE.
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