半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
1期
36-41
,共6页
张科%郭健民%孔明%李文宏
張科%郭健民%孔明%李文宏
장과%곽건민%공명%리문굉
电压调整器%电流模式的带隙基准源%温度系数%电源抑制比%可编程电压基准源
電壓調整器%電流模式的帶隙基準源%溫度繫數%電源抑製比%可編程電壓基準源
전압조정기%전류모식적대극기준원%온도계수%전원억제비%가편정전압기준원
voltage regulation modules%current mode bandgap voltage reference%temperature coefficient%power supply rejection ratio%programmable voltage reference
提出了一种新的基于改进的电流模式带隙基准源的可编程基准源的设计与实现方法.电路采用Chartered 0.35μm 工艺仿真并流片.测试结果表明,温度变化范围为0~100℃,温度系数为±36.3ppm/℃(VID=11110).电源电压变化范围为2.7~5V,其相对变化值为5mV.当VID0频率为125kHz时,瞬态响应最大毛刺幅度约为20mV.5位VID码不同的输入状态,输出基准电压从1.1变到1.85V,变化步长为25mV.
提齣瞭一種新的基于改進的電流模式帶隙基準源的可編程基準源的設計與實現方法.電路採用Chartered 0.35μm 工藝倣真併流片.測試結果錶明,溫度變化範圍為0~100℃,溫度繫數為±36.3ppm/℃(VID=11110).電源電壓變化範圍為2.7~5V,其相對變化值為5mV.噹VID0頻率為125kHz時,瞬態響應最大毛刺幅度約為20mV.5位VID碼不同的輸入狀態,輸齣基準電壓從1.1變到1.85V,變化步長為25mV.
제출료일충신적기우개진적전류모식대극기준원적가편정기준원적설계여실현방법.전로채용Chartered 0.35μm 공예방진병류편.측시결과표명,온도변화범위위0~100℃,온도계수위±36.3ppm/℃(VID=11110).전원전압변화범위위2.7~5V,기상대변화치위5mV.당VID0빈솔위125kHz시,순태향응최대모자폭도약위20mV.5위VID마불동적수입상태,수출기준전압종1.1변도1.85V,변화보장위25mV.
A new approach for the design and implementation of a programmable voltage reference based on an improved current mode bandgap voltage reference is presented.The circuit is simulated and fabricated with Chartered 0.35μm mixed-signal technology.Measurements demonstrate that the temperature coefficient is ±36.3ppm/℃ from 0 to 100℃ when the VID inputs are 11110.As the supply voltage is varied from 2.7 to 5V,the voltage reference varies by about 5mV.The maximum glitch of the transient response is about 20mV at 125kHz.Depending on the state of the five VID inputs,an output voltage between 1.1 and 1.85V is programmed in increments of 25mV.