CAJ | 학술논문

以双极性小分子4,9-二(4-(2,2-二苯乙烯基)苯基)萘并[2,3-c][1,2,5]噻二唑(BDPNTD)为发光层,制备得到了单层非掺杂红色荧光有机发光二极管.通过在阳极ITO与有机层BDPNTD之间插入1 nm厚的WO_3或MoO_3薄膜,获得了单层有机发光二极管:起亮电压为2.4 V,最大发光亮度为4950 cd·m~(-2),发光波长为636 nm,CIE坐标约为(0.65,0.35).这证明了作为修饰层的WO_3或MoO_3薄膜可以改进ITO/BDPNTD界面的空穴注入,进而在器件中实现空穴与电子的平衡.
이쌍겁성소분자4,9-이(4-(2,2-이분을희기)분기)내병[2,3-c][1,2,5]새이서(BDPNTD)위발광층,제비득도료단층비참잡홍색형광유궤발광이겁관.통과재양겁ITO여유궤층BDPNTD지간삽입1 nm후적WO_3혹MoO_3박막,획득료단층유궤발광이겁관:기량전압위2.4 V,최대발광량도위4950 cd·m~(-2),발광파장위636 nm,CIE좌표약위(0.65,0.35).저증명료작위수식층적WO_3혹MoO_3박막가이개진ITO/BDPNTD계면적공혈주입,진이재기건중실현공혈여전자적평형.
Non-doped red-emitting electrofluorescent single-layer organic light-emitting devices based on an ambipolar small molecule, 4,9-bis(4-(2,2-diphenylvinyl)phenyl)naphtho[2,3-c][l,2,5] thiadiazole (BDPNTD), were studied. A WO_3 or MoO_3 buffer layer with an optimized thickness of 1 nm was used and the single-layer device has a low turn-on voltage (2.4 V) and a high luminance (4950 cd·m~(-2)). The maximum emission wavelength was at about 636 nm and the CIE coordinates are at about (0.65,0.35). We confirmed that the WO_3 or MoO_3 buffer layer can improve hole injection at the ITO/ BDPNTD interface and it creates a hole-electron balance in these devices.