CAJ | 학술논문

讨论一款基于SiGe BiCMOS工艺工作速率为10 Gb/s激光驱动芯片的设计.该激光驱动芯片包括输入缓冲、驱动放大电路和输出级电路3个部分.输入缓冲、驱动放大电路采用电流模电路,满足高速数据传输和放大的能力.输出级电路结构采用新型的MOS-HBT共源共栅结构可以降低米勒效应减小输入电容,从而使激光驱动芯片工作在10 Gb/s时也能达到良好的性能.主电路电源电压为3.3 V,输出级电路供电电压为5.5 V,确保激光器有足够的电压摆幅.芯片总面积(包括焊盘)为600μm×800μm,,测试表明当输入10 Gb/s的非归零随机码,输出级电源电压为5.5 V时,电路总功耗为660 mw,在50 Ω负载上可以提供3 V的驱动电压(相应的驱动电流为60mA).测试眼图清晰,可以很好地满足SDH STM64/SONNET OC192和10 Gb/s以太网的模板要求.
토론일관기우SiGe BiCMOS공예공작속솔위10 Gb/s격광구동심편적설계.해격광구동심편포괄수입완충、구동방대전로화수출급전로3개부분.수입완충、구동방대전로채용전류모전로,만족고속수거전수화방대적능력.수출급전로결구채용신형적MOS-HBT공원공책결구가이강저미륵효응감소수입전용,종이사격광구동심편공작재10 Gb/s시야능체도량호적성능.주전로전원전압위3.3 V,수출급전로공전전압위5.5 V,학보격광기유족구적전압파폭.심편총면적(포괄한반)위600μm×800μm,,측시표명당수입10 Gb/s적비귀령수궤마,수출급전원전압위5.5 V시,전로총공모위660 mw,재50 Ω부재상가이제공3 V적구동전압(상응적구동전류위60mA).측시안도청석,가이흔호지만족SDH STM64/SONNET OC192화10 Gb/s이태망적모판요구.
This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology.The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage.With the current mode logic (CML) structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data.By employing MOS-HI3T cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate.The core circuit is operated under a 3.3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode.The chip occupies a die area of 600 μm × 800 μm.Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask.Under a 5.5 V supply voltage, the maximum output swing is 3.0 V with a 50 Ω load (the corresponding modulation current is 60 mA), and the total power dissipation is 660 mW.