CAJ | 학술논문

采用脉冲激光沉积技术在Pt/Ti/SiO2/Si(100)衬底上制备出多晶La0.67Sr0.33MnO3(LSMO)薄膜,对其电脉致非挥发可逆电阻开关特性进行研究.结果表明,Ag/LSMO/Pt结构具有明显的室温电脉冲诱发电阻开关特性,且在宽电压脉冲作用下表现出较低的开关电压和较快的变阻饱和速度.由此可见,总脉冲能量或电荷(电流作用)为该结构的电阻开关效应提供驱动力.对Ag/LSMO/Pt结构进行了耐久性测试,表明该结构具有良好的疲劳特性与保持特性,可应用于新型不挥发存储器、传感器及可变电阻等电子元器件的研制.
채용맥충격광침적기술재Pt/Ti/SiO2/Si(100)츤저상제비출다정La0.67Sr0.33MnO3(LSMO)박막,대기전맥치비휘발가역전조개관특성진행연구.결과표명,Ag/LSMO/Pt결구구유명현적실온전맥충유발전조개관특성,차재관전압맥충작용하표현출교저적개관전압화교쾌적변조포화속도.유차가견,총맥충능량혹전하(전류작용)위해결구적전조개관효응제공구동력.대Ag/LSMO/Pt결구진행료내구성측시,표명해결구구유량호적피로특성여보지특성,가응용우신형불휘발존저기、전감기급가변전조등전자원기건적연제.
Nonvolatile and reversible resistive switching of polyerystalline La0.67Sr0.33MnO3(LSMO) thin films deposited on Pt/Ti/SiO2/Si (100) substrates by a pulsed laser deposition (PLD) process was investigated using voltage pulses with current compliance. Clear resistive switching cycles were observed in the Ag/LSMO/Pt sample at room temperature, with lower switching voltages and higher saturation speed under pulses of longer duration, indicating that the total energy added to the device, or the total charge (through current) may be drivers for the resistive switching. Moreover, time dependence and write/erase endurance measurements of the reproducible resistive switching were also provided. The Ag/LSMO/Pt system presents long endurance and retention lifetime, thus providing a way for the development of new kinds of electronic devices, such as nonvolatile random access memories, sensors and variable resistance.