CAJ | 학술논문

在多结太阳电池结构中,P型锗单晶片不仅作为衬底,也是整体电池结构中的一个结。在外延生长过程中,需要进行多次异质外延生长,因此,对P型锗单晶片的表面质量提出了更高的要求。通过对P型锗片去蜡技术的研究,提高了锗片表面质量,降低了外延生长过程中雾缺陷的比例。
재다결태양전지결구중,P형타단정편불부작위츤저,야시정체전지결구중적일개결。재외연생장과정중,수요진행다차이질외연생장,인차,대P형타단정편적표면질량제출료경고적요구。통과대P형타편거사기술적연구,제고료타편표면질량,강저료외연생장과정중무결함적비례。
In the construction of multi-junction solar cells,the p-type germanium polished wafers was not only used as the substrate of the solar cells,but also used as one part of the junction.During the MOCVD process,it was grown some layers on the germanium polished wafers by the hetero-junction epitaxial growth process.So the germanium polished wafers had the perfect surface quality in order to get the lattice match.In the article,the surface of the Ge polished wafers was greatly improved by researching the dewaxing technology.