CAJ | 학술논문

多晶硅纳米薄膜具有优良的压阻特性,为提高其在传感器应用中的稳定性和可靠性,对这种薄膜的钝化层结构进行了研究.基于压力传感芯片的结构特点,建立了钝化层结构的有限元分析分析模型,给出了应力分布与SiO_2和Si_3N_4钝化层结构之间关系.结果表明:采用Si_3N_4-SiO_2-Si_3N_4复合钝化结构,适当控制各结构层厚度可有效降低热失配引起的内应力.从而给出了降低薄膜内应力的钝化方法,为多晶硅纳米薄膜在压阻式传感器上的应用提供了必要的技术支持.
다정규납미박막구유우량적압조특성,위제고기재전감기응용중적은정성화가고성,대저충박막적둔화층결구진행료연구.기우압력전감심편적결구특점,건립료둔화층결구적유한원분석분석모형,급출료응력분포여SiO_2화Si_3N_4둔화층결구지간관계.결과표명:채용Si_3N_4-SiO_2-Si_3N_4복합둔화결구,괄당공제각결구층후도가유효강저열실배인기적내응력.종이급출료강저박막내응력적둔화방법,위다정규납미박막재압조식전감기상적응용제공료필요적기술지지.
In order to improve stability and reliability of polysilicon nanofilms with favourable piezoresistive properties applied in some sensors,the passivation structure of the nanofilms were studied.Based on the structure of general press sensor chips,the models of finite element analysis were set up for the passivation structure,and then the influence of SiO_2 and Si_3N_4 passivation structure was shown on the stress distribution.The conclusion was indicated that using Si_3N_4-SiO_2-Si3N_4 compound passivation structure,the internal stress caused by thermal dilation mismatch could be reduced availably in virtue of reasonable manipulation of passivation thickness.Consequently,the passivation method of polysilicon nano-film were given to reduce stress within the film,which provided necessary technical support for the application of the nanofilms in strain sensors.