无机材料学报
無機材料學報
무궤재료학보
JOURNAL OF INORGANIC MATERIALS
2001年
1期
37-44
,共8页
王圣来%付有君%孙洵%李义平%曾红%高樟寿
王聖來%付有君%孫洵%李義平%曾紅%高樟壽
왕골래%부유군%손순%리의평%증홍%고장수
过饱和度%晶体质量%实时控制%电导
過飽和度%晶體質量%實時控製%電導
과포화도%정체질량%실시공제%전도
用变压器型电导仪实现了KDP晶体生长过程中溶液的浓度和过饱和度的实时测量与控制,测量精度0.03g KDP/100g H2O(0.10%相对过饱和度),控制精度与测量精度相当. 过饱和度实时控制系统提供了一种方法,可以研究在不同工艺条件生长KDP晶体时,过饱和度与晶体生长和性能的关系. 用分析纯原料生长KDP晶体,发现随着过饱和度的增大,晶体的生长速度加快,晶体的均匀性降低. 过饱和度实时控制系统可以使KDP晶体在相对恒定的过饱和度下生长,提高了晶体生长的均匀性,抑制了生长层和散射颗粒的产生,有利于提高晶体的光学透过率和光伤阈值.
用變壓器型電導儀實現瞭KDP晶體生長過程中溶液的濃度和過飽和度的實時測量與控製,測量精度0.03g KDP/100g H2O(0.10%相對過飽和度),控製精度與測量精度相噹. 過飽和度實時控製繫統提供瞭一種方法,可以研究在不同工藝條件生長KDP晶體時,過飽和度與晶體生長和性能的關繫. 用分析純原料生長KDP晶體,髮現隨著過飽和度的增大,晶體的生長速度加快,晶體的均勻性降低. 過飽和度實時控製繫統可以使KDP晶體在相對恆定的過飽和度下生長,提高瞭晶體生長的均勻性,抑製瞭生長層和散射顆粒的產生,有利于提高晶體的光學透過率和光傷閾值.
용변압기형전도의실현료KDP정체생장과정중용액적농도화과포화도적실시측량여공제,측량정도0.03g KDP/100g H2O(0.10%상대과포화도),공제정도여측량정도상당. 과포화도실시공제계통제공료일충방법,가이연구재불동공예조건생장KDP정체시,과포화도여정체생장화성능적관계. 용분석순원료생장KDP정체,발현수착과포화도적증대,정체적생장속도가쾌,정체적균균성강저. 과포화도실시공제계통가이사KDP정체재상대항정적과포화도하생장,제고료정체생장적균균성,억제료생장층화산사과립적산생,유리우제고정체적광학투과솔화광상역치.
A real-time cross-correlation between concentration, temperature and electrical conductivity of KDP aqueous solution was determined by using an transformer-type conductivity sensor. This correlation can be expressed by L(Ts,t)=L0(t)+b1(t)Ts+b2(t)Ts2. On the base of the correlation, a computer system was made to realize the in-line measurement and control of the supersaturation of the growth solution. The system can control the supersaturation within 0.04g KDP/100g water (0.12% relative supersaturation). The system was used to study the relationship between the supersaturation of the growing solution and the properties of the crystals grown from different raw materials. It was found that growth rate rise but the homogeneity of KDP crystal goes down as the supersaturation increases. The system makes KDP crystal growing under a stable supersaturation and the growth band and scattering particles insidethe crystals suppressed, so the optical transmittance and laser damage threshold of the crystal improved.