CAJ | 학술논문

GaN是一种新型的宽禁带半导体兰色发光与激光材料。GaN中的缺陷和杂质对于材料的电学输运特性和发光性能有着至关重要的影响。本文综述了近年来对于GaN中缺陷和杂质的理论与实验研究。包括对天然缺陷与非特意性掺杂的研究，以及对离子注入所产生的缺陷与深能级的研究。
GaN시일충신형적관금대반도체란색발광여격광재료。GaN중적결함화잡질대우재료적전학 수운특성화발광성능유착지관중요적영향。본문종술료근년래대우GaN중결함화잡질적이론 여실험연구。포괄대천연결함여비특의성참잡적연구，이급대리자주입소산생적결함여심능 급적연구。
GaN is a new wide band gap semiconductor laser material. The defects and impurities in GaN has very important affections on the electric transport and light emission properties of the material. The recent years theoretical and experim ental researches on the defects and impurities in GaN, which include the studies of native defects and unintentional impurities, and ionimplantation induced de fects and deep levels, are reviewed in this paper.