电子浴辅助阴极电弧源法合成AlN薄膜机理初探
전자욕보조음겁전호원법합성AlN박막궤리초탐
Initial Mechanism Discuss on Synthesis of AlN Thin Film by Activated Reactive Ion Plating with Cathode Arc Source Assisted by Electrons Bath
  • 万方数据
    热加工工艺 열가공공예
    HOT WORKING TECHNOLOGY
    2001年 1期 5-6 ,共2页

    潘俊德%田林海%莘海维%贺琦%赵晋香

    반준덕%전림해%신해유%하기%조진향

    阴极电弧源法%AlN薄膜%机理初探 陰極電弧源法%AlN薄膜%機理初探
    음겁전호원법%AlN박막%궤리초탐
    研究了电子浴辅助阴极电弧源法合成AlN薄膜的形核生长过程，并对生长机理进行了初步的探讨。
    연구료전자욕보조음겁전호원법합성AlN박막적형핵생장과정，병대생장궤리진행료초보적탐토。
    The nucleation and growth process of AlN th in film synthesizedby activated reactive ion plating with cathode arc source as sisted by electrons bath was researched.At the same time,the growth mechanism of AlN thin film was initially discussed.
    원문보기 원문다운로드 사이트로이동
저자의 최근 논문